Characteristics of Ni Schottky contacts on compensated 4H-SiC layers

• The electrical properties of Ni Schottky contacts to compensated 4H-SiC layers have been characterized by means of IN and C-V measurements and the key parameters have been determined. The measured barrier heights were between 0.90 eV and 2.90 eV depending on the conductivity type and the donor/acceptor concentration as well as the measurement techniques used. Inhomogeneties in IN characteristics of some rectifiers at lower forward-bias voltages have been observed. This may suggest enhanced trapping mechanism due to the nonuniform boron compensation of the epilayers.

Keyword

epilayer compensation

recombination

Schottky contacts

thermionic emission

TECHNOLOGY

TEKNIKVETENSKAP

Publication and Content Type

ref (subject category)

kon (subject category)