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P-type 6H-SiC films...
P-type 6H-SiC films in the creation of triode structures for low ionization radiation
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Ivanov, AM (author)
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Strokan, NB (author)
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Davydov, DV (author)
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Savkina, NS (author)
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Strelchuk, AM (author)
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- Lebedev, Alexander (author)
- Linköpings universitet,Tekniska högskolan,Institutionen för fysik, kemi och biologi
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- Yakimova, Rositsa (author)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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(creator_code:org_t)
- 2003
- 2003
- English.
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In: Materials Science Forum, Vols. 433-436. ; , s. 969-972
- Related links:
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https://urn.kb.se/re...
Abstract
Subject headings
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- The signal value of the transistor-like detector on applied voltage was investigated. It was measure induced-current recording from fluxes of X-ray and optical quanta. A superlinear rise in the resulting signal was observed with increasing voltage. The signal was amplified by a factor of several tens with respect to the value chosen for normalization. A description in terms of the phototriode model gives acceptable values for the main parameters: base width, diffusion length of electrons, and space charge region of the collector. It is important that SiC films with the thickness d similar to 10 mum can be used to detect penetrating radiation, for example, X-ray. The effective thickness of the films exceeds d by the signal amplification factor (and proves to be in range of hundred mum).
Keyword
- low ionization radiation
- photocurrent
- signal amplification
- silicon carbide
- sublimation epitaxy
- triode structures
- X-ray
- TECHNOLOGY
- TEKNIKVETENSKAP
Publication and Content Type
- ref (subject category)
- kon (subject category)
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