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P-type 6H-SiC films in the creation of triode structures for low ionization radiation

Ivanov, AM (author)
Strokan, NB (author)
Davydov, DV (author)
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Savkina, NS (author)
Strelchuk, AM (author)
Lebedev, Alexander (author)
Linköpings universitet,Tekniska högskolan,Institutionen för fysik, kemi och biologi
Yakimova, Rositsa (author)
Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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 (creator_code:org_t)
2003
2003
English.
In: Materials Science Forum, Vols. 433-436. ; , s. 969-972
  • Conference paper (peer-reviewed)
Abstract Subject headings
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  • The signal value of the transistor-like detector on applied voltage was investigated. It was measure induced-current recording from fluxes of X-ray and optical quanta. A superlinear rise in the resulting signal was observed with increasing voltage. The signal was amplified by a factor of several tens with respect to the value chosen for normalization. A description in terms of the phototriode model gives acceptable values for the main parameters: base width, diffusion length of electrons, and space charge region of the collector. It is important that SiC films with the thickness d similar to 10 mum can be used to detect penetrating radiation, for example, X-ray. The effective thickness of the films exceeds d by the signal amplification factor (and proves to be in range of hundred mum).

Keyword

low ionization radiation
photocurrent
signal amplification
silicon carbide
sublimation epitaxy
triode structures
X-ray
TECHNOLOGY
TEKNIKVETENSKAP

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