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Influence of epitaxial layer on SiC Schottky diode gas sensors operated under high-temperature conditions

Nakagomi, S (author)
Ishinomaki Senshu Univ, Sch Engn, Ishinomaki 9868580, Japan Linkoping Univ, Div Appl Phys, SE-58183 Linkoping, Sweden SSENCE, SE-58183 Linkoping, Sweden Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden
Shinobu, H (author)
Ishinomaki Senshu Univ, Sch Engn, Ishinomaki 9868580, Japan Linkoping Univ, Div Appl Phys, SE-58183 Linkoping, Sweden SSENCE, SE-58183 Linkoping, Sweden Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden
Unéus, Lars (author)
Linköpings universitet,Tekniska högskolan,Tillämpad Fysik
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Lundström, Ingemar (author)
Linköpings universitet,Tekniska högskolan,Tillämpad Fysik
Ekedahl, Lars-Gunnar (author)
Linköpings universitet,Tekniska högskolan,Institutionen för fysik, kemi och biologi
Yakimova, Rositsa (author)
Linköpings universitet,Tekniska högskolan,Halvledarmaterial
Syväjärvi, Mikael (author)
Linköpings universitet,Tekniska högskolan,Halvledarmaterial
Henry, Anne (author)
Linköpings universitet,Tekniska högskolan,Halvledarmaterial
Janzén, Erik (author)
Linköpings universitet,Tekniska högskolan,Halvledarmaterial
Lloyd-Spets, Anita (author)
Linköpings universitet,Tekniska högskolan,Tillämpad Fysik
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 (creator_code:org_t)
2002
2002
English.
In: Materials Science Forum, Vols. 389-393. ; , s. 1423-1426
Related links:
https://urn.kb.se/re...
  • Conference paper (peer-reviewed)
Abstract Subject headings
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  • Schottky diode gas sensors were fabricated on top of the epitaxial layer grown by three different methods, purchased from Cree Research Inc., by hot wall CVD, or by sublimation at a high growth rate. The epitaxial layers have different thickness and doping. The current-voltage characteristics of the gas sensors were compared in different gas ambient during operation in the high temperature region. The temperature dependence of the series resistance of the diodes revealed two types of carrier scattering mechanisms, impurity scattering for the sublimation epitaxial layer at 300-400degreesC and at 400-600degreesC, lattice scattering for all diodes. The ideality factor of the diode fabricated on the Cree substrate is higher than others. The higher ideality factor gives rise to a larger forward voltage change for a change in gas ambient. The amount of change in barrier height caused by a change in the ambient gas is almost the same for the three types of diodes. The value of the barrier height of the diode grown by the sublimation method is lower than for the others, which gives a higher reverse saturation current at temperatures above 400degreesC. The largest saturation current also shows the largest current change when switching between different gas atmospheres.

Keyword

epitaxial layers
gas sensors
high temperature
resistance
scattering
Schottky diodes
TECHNOLOGY
TEKNIKVETENSKAP

Publication and Content Type

ref (subject category)
kon (subject category)

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