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Interface effects in type-II CdSe/BeTe quantum dots

Shubina, Tatiana (author)
Linköpings universitet,Tekniska högskolan,Institutionen för fysik, kemi och biologi
Ivanov, SV (author)
AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden Chalmers, S-41296 Gothenburg, Sweden Gothenburg Univ, S-41296 Gothenburg, Sweden Univ Ulm, Abt Halbleiterphys, D-89081 Ulm, Germany Univ Wurzburg, Inst Phys, D-97074 Wurzburg, Germany
Toropov, AA (author)
AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden Chalmers, S-41296 Gothenburg, Sweden Gothenburg Univ, S-41296 Gothenburg, Sweden Univ Ulm, Abt Halbleiterphys, D-89081 Ulm, Germany Univ Wurzburg, Inst Phys, D-97074 Wurzburg, Germany
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Sorokin, SV (author)
AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden Chalmers, S-41296 Gothenburg, Sweden Gothenburg Univ, S-41296 Gothenburg, Sweden Univ Ulm, Abt Halbleiterphys, D-89081 Ulm, Germany Univ Wurzburg, Inst Phys, D-97074 Wurzburg, Germany
Lebedev, Alexander (author)
Linköpings universitet,Tekniska högskolan,Institutionen för fysik, kemi och biologi
Kyutt, RN (author)
AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden Chalmers, S-41296 Gothenburg, Sweden Gothenburg Univ, S-41296 Gothenburg, Sweden Univ Ulm, Abt Halbleiterphys, D-89081 Ulm, Germany Univ Wurzburg, Inst Phys, D-97074 Wurzburg, Germany
Solnyshkov, DD (author)
AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden Chalmers, S-41296 Gothenburg, Sweden Gothenburg Univ, S-41296 Gothenburg, Sweden Univ Ulm, Abt Halbleiterphys, D-89081 Ulm, Germany Univ Wurzburg, Inst Phys, D-97074 Wurzburg, Germany
Pozina, Galia (author)
Linköpings universitet,Tekniska högskolan,Halvledarmaterial
Bergman, JP (author)
AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden Chalmers, S-41296 Gothenburg, Sweden Gothenburg Univ, S-41296 Gothenburg, Sweden Univ Ulm, Abt Halbleiterphys, D-89081 Ulm, Germany Univ Wurzburg, Inst Phys, D-97074 Wurzburg, Germany
Monemar, Bo (author)
Linköpings universitet,Tekniska högskolan,Halvledarmaterial
Willander, Magnus (author)
Linköpings universitet,Tekniska högskolan,Institutionen för teknik och naturvetenskap
Waag, A (author)
AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden Chalmers, S-41296 Gothenburg, Sweden Gothenburg Univ, S-41296 Gothenburg, Sweden Univ Ulm, Abt Halbleiterphys, D-89081 Ulm, Germany Univ Wurzburg, Inst Phys, D-97074 Wurzburg, Germany
Landwehr, G (author)
AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden Chalmers, S-41296 Gothenburg, Sweden Gothenburg Univ, S-41296 Gothenburg, Sweden Univ Ulm, Abt Halbleiterphys, D-89081 Ulm, Germany Univ Wurzburg, Inst Phys, D-97074 Wurzburg, Germany
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 (creator_code:org_t)
2002
2002
English.
In: Physica status solidi. B, Basic research. - 0370-1972 .- 1521-3951. ; 229:1, s. 489-492
  • Journal article (peer-reviewed)
Abstract Subject headings
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  • We report on optical and structural studies of the interface symmetry in CdSe/BeTe multiple-layer structures containing self-assembled quantum dots. Temperature and decay behavior of the broad photoluminescence (PL) band is consistent with the type-II transitions involving deeply localized electron states. Large linear in-plane polarization of the PL (up to 80%) is observed, implying the C-2v (or lower) symmetry of the individual places of the electron localization.

Keyword

TECHNOLOGY
TEKNIKVETENSKAP

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