Presence of hydrogen in SiC

• An unexpected presence of hydrogen in 4H-SiC was revealed by the observation of hydrogen related lines in the low-temperature photoluminescence (LTPL) spectrum after secondary ion mass spectrometry (SIMS) measurements. The lines were not observed before SIMS. The high-energy ions during SIMS are proposed to break the boron-hydrogen bonds. This phenomenon is observable only for a certain impurity concentration in the material due to the competition of various recombination channels during the LTPL experiment.

Subject headings

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

Keyword

boron

hydrogen

photoluminescence

SIMS

TECHNOLOGY

TEKNIKVETENSKAP

Publication and Content Type

ref (subject category)

kon (subject category)