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Considerations on the crystal morphology in the sublimation growth of SiC
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- Raback, P (author)
- Ctr Sci Comp, FIN-02101 Espoo, Finland Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden Okmet AB, SE-17824 Ekero, Sweden Helsinki Univ Technol, Phys Lab, FIN-02015 Helsinki, Finland
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- Yakimova, Rositsa (author)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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- Syväjärvi, Mikael (author)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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- (creator_code:org_t)
- Trans Tech Publications Inc. 2000
- 2000
- English.
- In: Materials Science Forum, Vols. 338-343. - : Trans Tech Publications Inc.. - 9780878498543 - 0878498540 ; , s. 95-98
- Conference paper (peer-reviewed)
Abstract
Subject headings
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- In this paper the shape evolution of SiC source and seed is studied with simulations. Some basic geometries and temperature distributions are investigated. Also the condition for stable growth is discussed.
Keyword
- crystal growth
- instability
- mass transport
- shape evolution
- simulation
- TECHNOLOGY
- TEKNIKVETENSKAP
Publication and Content Type
- ref (subject category)
- kon (subject category)
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- Nieminen, R
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