Defect distribution in a-plane GaN on Al2 O3

Tuomisto, F. (author): Laboratory of Physics, Helsinki University of Technology, FI-02015 TKK, Finland

Paskova, T. (author): Institute of Solid State Physics, University of Bremen, D-28359 Bremen, Germany

Kroger, R. (author): Kröger, R., Institute of Solid State Physics, University of Bremen, D-28359 Bremen, Germany

Figge, S. (author): Institute of Solid State Physics, University of Bremen, D-28359 Bremen, Germany

Hommel, D. (author): Institute of Solid State Physics, University of Bremen, D-28359 Bremen, Germany

Monemar, Bo (author): Linköpings universitet,Tekniska högskolan,Halvledarmaterial

(creator_code:org_t)

AIP Publishing, 2007
2007
English.
In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 90:12

Related links:: https://aaltodoc.aal...; show more...; https://urn.kb.se/re...; https://doi.org/10.1...; show less...

Abstract Subject headings

The authors studied the structural and point defect distributions of hydride vapor phase epitaxial GaN film grown in the [11-20] a direction on (1-102) r -plane sapphire with metal-organic vapor phase deposited a-GaN template using transmission electron microscopy, secondary ion mass spectrometry, and positron annihilation spectroscopy. Grown-in extended and point defects show constant behavior as a function of thickness, contrary to the strong nonuniform defect distribution observed in GaN grown along the [0001] direction. The observed differences are explained by orientation-dependent and kinetics related defect incorporation. © 2007 American Institute of Physics.

By the author/editor: Tuomisto, F.; Paskova, T.; Kroger, R.; Figge, S.; Hommel, D.; Monemar, Bo; show more...; Kersting, R.; show less...

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