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Deviations from Vegard's rule in Al1-xInxN (0001) alloy thin films grown by magnetron sputter epitaxy

Seppanen, T. (author)
Hultman, Lars (author)
Linköpings universitet,Tekniska högskolan,Tunnfilmsfysik
Birch, Jens (author)
Linköpings universitet,Tekniska högskolan,Tunnfilmsfysik
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Beckers, M. (author)
Institute for Ion Beam Physics and Materials Science (FWI), Forschungszentrum Rossendorf e.V. (FZR), P.O. Box 510119, 01314 Dresden, Germany
Kreissig, U. (author)
Institute for Ion Beam Physics and Materials Science (FWI), Forschungszentrum Rossendorf e.V. (FZR), P.O. Box 510119, 01314 Dresden, Germany
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 (creator_code:org_t)
AIP Publishing, 2007
2007
English.
In: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 101:4
  • Journal article (peer-reviewed)
Abstract Subject headings
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  • Al1-xInxN (0001) thin films of the pseudobinary AlN-InN system were grown epitaxially onto (111)-oriented MgO wafers with seed layers of Ti1-y Zry N by dual direct current magnetron sputtering under ultrahigh vacuum conditions. The relaxed film c -axis lattice parameters determined by x-ray diffraction were studied as a function of composition in the range of 0.07

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TECHNOLOGY
TEKNIKVETENSKAP

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