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Structural and morphological properties of ZnO : Ga thin films
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- Khranovskyy, V. (author)
- Institute for Problems of Material Science, Krzhyzhanovskyy str. 3, 03142 Kiev, Ukraine, University of Oslo, Physics Department, Centre for Materials Science and Nanotechnology, N-0316 Oslo, Norway
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- Grossner, U. (author)
- University of Oslo, Physics Department, Centre for Materials Science and Nanotechnology, N-0316 Oslo, Norway
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- Nilsen, O. (author)
- University of Oslo, Chemistry Department, Centre for Materials Science and Nanotechnology, N-0316 Oslo, Norway
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- Institute for Problems of Material Science, Krzhyzhanovskyy str 3, 03142 Kiev, Ukraine, University of Oslo, Physics Department, Centre for Materials Science and Nanotechnology, N-0316 Oslo, Norway University of Oslo, Physics Department, Centre for Materials Science and Nanotechnology, N-0316 Oslo, Norway (creator_code:org_t)
- Elsevier BV, 2006
- 2006
- English.
- In: Thin Solid Films. - : Elsevier BV. - 0040-6090 .- 1879-2731. ; 515:2 SPEC. ISS., s. 472-476
- Journal article (peer-reviewed)
Abstract
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- Zinc oxide (ZnO) is a promising semiconductor material with a great variety of applications. Compared to undoped ZnO, impurity-doped ZnO has a lower resistivity and better stability. With this aim, Ga has been proposed as a dopant. In this study, the structural characteristics and surface morphology of ZnO films produced by PEMOCVD at a substrate temperature of 250 °C on the c-plane (001) of sapphire were investigated. Doping was realized with 1, 3, 5 and 10 wt.% of Ga2(AA)3 in the precursor's mixture. At lower contents, Ga stimulates growth of (002) oriented textured films and the smallest FWHM was obtained as low as 0.17° for ZnO:Ga with 1 wt.%. A change in preferential orientation as well as surface smoothing and roughness decreasing of the films were observed with further increasing Ga content in precursor's mixture. We assume a key role of Ga and note that such a feature would be beneficial for the application of ZnO thin films for formation of abrupt junctions in p-n device structures. © 2005 Elsevier B.V. All rights reserved.
Keyword
- AFM
- PEMOCVD
- XRD
- ZnO doped by Ga
- NATURAL SCIENCES
- NATURVETENSKAP
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- ref (subject category)
- art (subject category)
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- Khranovskyy, V.
- Grossner, U.
- Nilsen, O.
- Lazorenko, V.
- Lashkarev, G.V.
- Svensson, B.G.
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- Thin Solid Films
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- Linköping University
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