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  • Wilhelmsson, O.Uppsala universitet,Institutionen för materialkemi,Department of Materials Chemistry, The Ångström Laboratory, Uppsala University, P.O. Box 538, SE-751 21 Uppsala, Sweden (author)

Deposition and characterization of ternary thin films within the Ti-Al-C system by DC magnetron sputtering

  • Article/chapterEnglish2006

Publisher, publication year, extent ...

  • Elsevier BV,2006
  • printrdacarrier

Numbers

  • LIBRIS-ID:oai:DiVA.org:liu-50222
  • https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-50222URI
  • https://doi.org/10.1016/j.jcrysgro.2006.03.008DOI
  • https://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-96302URI

Supplementary language notes

  • Language:English
  • Summary in:English

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  • Subject category:ref swepub-contenttype
  • Subject category:art swepub-publicationtype

Notes

  • The formation of ternary compounds within the Ti-Al-C system was studied by magnetron sputtering for thin-film deposition and first-principles calculations for phase stability. As-deposited films were characterized with X-ray diffraction (XRD) and high-resolution transmission electron microscopy (TEM). The hardness and Young's moduli of the material were studied by nanoindentation. Epitaxial and phase-pure films of Mn+1AXn phases Ti3AlC2 and Ti2AlC as well as the perovskite phase Ti3AlC were deposited on Al2O3(00l) wafers kept at temperatures between 800 and 900 °C. The only ternary phases observed at low temperatures (300 °C) were Ti3AlC and cubic (Ti,Al)C, the latter can be described as a metastable solid solution of Al in TiC similar to the more studied (Ti,Al)N system. The difficulties to form MAX phases at low substrate temperatures were attributed of requirement for a sufficient diffusivity to partition the elements corresponding to the relatively complex crystal structures with long c-axes. While MAX-phase synthesis at 800 °C is significantly lower than contemporary bulk sintering processes, a reduction of the substrate temperature towards 300 °C in the present thin-film deposition experiments resulted in stacking sequence variations and the intergrowth of (Ti,Al)C. © 2006 Elsevier B.V. All rights reserved.

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  • Persson, PerLinköpings universitet,Uppsala universitet,Institutionen för materialkemi,Department of Materials Chemistry, The Ångström Laboratory, Uppsala University, P.O. Box 538, SE-751 21 Uppsala, Sweden,Tekniska högskolan,Tunnfilmsfysik(Swepub:liu)perpe25 (author)
  • Lewin, ErikUppsala universitet,Institutionen för materialkemi,Department of Materials Chemistry, The Ångström Laboratory, Uppsala University, P.O. Box 538, SE-751 21 Uppsala, Sweden(Swepub:uu)leeri169 (author)
  • Emmerlich, JensLinköpings universitet,Tekniska högskolan,Tunnfilmsfysik(Swepub:liu)jenem14 (author)
  • Eklund, PerLinköpings universitet,Tekniska högskolan,Tunnfilmsfysik(Swepub:liu)perek02 (author)
  • Persson, PerLinköpings universitet,Tekniska högskolan,Tunnfilmsfysik(Swepub:liu)perpe25 (author)
  • Högberg, HansLinköpings universitet,Tekniska högskolan,Tunnfilmsfysik(Swepub:liu)hanho47 (author)
  • Li, S. (author)
  • Ahuja, RajeevUppsala universitet,Fysiska institutionen,Uppsala University, Dept. of Physics, The Ångström Laboratory, P.O. Box 530, SE-751 21 Uppsala, Sweden(Swepub:uu)rajeeva (author)
  • Eriksson, O.Uppsala universitet,Fysiska institutionen,Uppsala University, Dept. of Physics, The Ångström Laboratory, P.O. Box 530, SE-751 21 Uppsala, Sweden (author)
  • Hultman, LarsLinköpings universitet,Tekniska högskolan,Tunnfilmsfysik(Swepub:liu)larhu75 (author)
  • Jansson, U.Uppsala universitet,Institutionen för materialkemi,Department of Materials Chemistry, The Ångström Laboratory, Uppsala University, P.O. Box 538, SE-751 21 Uppsala, Sweden (author)
  • Uppsala universitetInstitutionen för materialkemi (creator_code:org_t)

Related titles

  • In:Journal of Crystal Growth: Elsevier BV291:1, s. 290-3000022-02481873-5002

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