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Deposition and char...
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Wilhelmsson, O.Uppsala universitet,Institutionen för materialkemi,Department of Materials Chemistry, The Ångström Laboratory, Uppsala University, P.O. Box 538, SE-751 21 Uppsala, Sweden
(author)
Deposition and characterization of ternary thin films within the Ti-Al-C system by DC magnetron sputtering
- Article/chapterEnglish2006
Publisher, publication year, extent ...
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Elsevier BV,2006
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Numbers
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LIBRIS-ID:oai:DiVA.org:liu-50222
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https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-50222URI
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https://doi.org/10.1016/j.jcrysgro.2006.03.008DOI
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https://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-96302URI
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Language:English
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Summary in:English
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Subject category:ref swepub-contenttype
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Subject category:art swepub-publicationtype
Notes
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The formation of ternary compounds within the Ti-Al-C system was studied by magnetron sputtering for thin-film deposition and first-principles calculations for phase stability. As-deposited films were characterized with X-ray diffraction (XRD) and high-resolution transmission electron microscopy (TEM). The hardness and Young's moduli of the material were studied by nanoindentation. Epitaxial and phase-pure films of Mn+1AXn phases Ti3AlC2 and Ti2AlC as well as the perovskite phase Ti3AlC were deposited on Al2O3(00l) wafers kept at temperatures between 800 and 900 °C. The only ternary phases observed at low temperatures (300 °C) were Ti3AlC and cubic (Ti,Al)C, the latter can be described as a metastable solid solution of Al in TiC similar to the more studied (Ti,Al)N system. The difficulties to form MAX phases at low substrate temperatures were attributed of requirement for a sufficient diffusivity to partition the elements corresponding to the relatively complex crystal structures with long c-axes. While MAX-phase synthesis at 800 °C is significantly lower than contemporary bulk sintering processes, a reduction of the substrate temperature towards 300 °C in the present thin-film deposition experiments resulted in stacking sequence variations and the intergrowth of (Ti,Al)C. © 2006 Elsevier B.V. All rights reserved.
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Persson, PerLinköpings universitet,Uppsala universitet,Institutionen för materialkemi,Department of Materials Chemistry, The Ångström Laboratory, Uppsala University, P.O. Box 538, SE-751 21 Uppsala, Sweden,Tekniska högskolan,Tunnfilmsfysik(Swepub:liu)perpe25
(author)
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Lewin, ErikUppsala universitet,Institutionen för materialkemi,Department of Materials Chemistry, The Ångström Laboratory, Uppsala University, P.O. Box 538, SE-751 21 Uppsala, Sweden(Swepub:uu)leeri169
(author)
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Emmerlich, JensLinköpings universitet,Tekniska högskolan,Tunnfilmsfysik(Swepub:liu)jenem14
(author)
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Eklund, PerLinköpings universitet,Tekniska högskolan,Tunnfilmsfysik(Swepub:liu)perek02
(author)
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Persson, PerLinköpings universitet,Tekniska högskolan,Tunnfilmsfysik(Swepub:liu)perpe25
(author)
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Högberg, HansLinköpings universitet,Tekniska högskolan,Tunnfilmsfysik(Swepub:liu)hanho47
(author)
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Li, S.
(author)
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Ahuja, RajeevUppsala universitet,Fysiska institutionen,Uppsala University, Dept. of Physics, The Ångström Laboratory, P.O. Box 530, SE-751 21 Uppsala, Sweden(Swepub:uu)rajeeva
(author)
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Eriksson, O.Uppsala universitet,Fysiska institutionen,Uppsala University, Dept. of Physics, The Ångström Laboratory, P.O. Box 530, SE-751 21 Uppsala, Sweden
(author)
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Hultman, LarsLinköpings universitet,Tekniska högskolan,Tunnfilmsfysik(Swepub:liu)larhu75
(author)
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Jansson, U.Uppsala universitet,Institutionen för materialkemi,Department of Materials Chemistry, The Ångström Laboratory, Uppsala University, P.O. Box 538, SE-751 21 Uppsala, Sweden
(author)
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Uppsala universitetInstitutionen för materialkemi
(creator_code:org_t)
Related titles
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In:Journal of Crystal Growth: Elsevier BV291:1, s. 290-3000022-02481873-5002
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Wilhelmsson, O.
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Persson, Per
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Lewin, Erik
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Emmerlich, Jens
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Eklund, Per
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Högberg, Hans
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Li, S.
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Ahuja, Rajeev
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Eriksson, O.
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Hultman, Lars
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Jansson, U.
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