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Properties of AlN e...
Properties of AlN epitaxial layers on 6H-SiC substrate grown by sublimation in argon, nitrogen, and their mixtures
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- Beshkova, M. (author)
- Bulgarian Academy of Science, Sofia, Bulgaria
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- Zakhariev, Z. (author)
- Bulgarian Academy of Science, Sofia, Bulgaria
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- Abrashev, M. V. (author)
- University of Sofia, Bulgaria
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- Birch, Jens (author)
- Linköpings universitet,Tunnfilmsfysik,Tekniska högskolan
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- Postovit, A. (author)
- Institute of Problem Microelectronics Technology and High Purity Materials, Moskow, Russia
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- Yakimova, Rositsa (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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(creator_code:org_t)
- Elsevier, 2006
- 2006
- English.
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In: Materials Science & Engineering. - : Elsevier. - 0921-5107 .- 1873-4944. ; 129:1-3, s. 228-231
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
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- Epitaxial layers of aluminum nitride (AlN) have been grown at temperature 1900 °C on 10 mm × 10 mm 6H-SiC substrate via sublimation-recondensation in RF heated graphite furnace. The source material was polycrystalline sintered AlN. Growth of AlN layers in pure nitrogen, mixed nitrogen/argon and pure argon atmosphere of 50 mbar were compared. A maximum growth rate of about 30 µm/h was achieved in pure nitrogen atmosphere. The surface morphology reflects the hexagonal symmetry of the seed, which is characteristic of an epitaxial growth for samples grown in a pure nitrogen and mixed nitrogen/argon atmosphere. X-ray diffraction (XRD) measurements show very strong and well defined (0 0 0 2) reflection positioned at around 36° in symmetric ?-2? scans. Micro-Raman spectroscopy reveals that the films have a wurtzite structure. Secondary-ion mass spectroscopy (SIMS) results showed a low concentration of carbon incorporation in the AlN layers. This study demonstrates that nitrogen is necessary for the successful epitaxial growth of AlN on 6H-SiC by sublimation. © 2006 Elsevier B.V. All rights reserved.
Subject headings
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Keyword
- AlN
- Gas ambient
- Morphology
- Raman spectroscopy
- Sublimation epitaxy
- XRD
Publication and Content Type
- ref (subject category)
- art (subject category)
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