III-V/II-VI heterovalent double quantum wells

Toropov, A.A. (author): Ioffe Physico-Technical Institute, Polytehknicheskaya 26, 194021 St. Petersburg, Russian Federation

Sedova, I.V. (author): Ioffe Physico-Technical Institute, Polytehknicheskaya 26, 194021 St. Petersburg, Russian Federation

Sorokin, S.V. (author): Ioffe Physico-Technical Institute, Polytehknicheskaya 26, 194021 St. Petersburg, Russian Federation

Terent'ev, Ya.V. (author): Ioffe Physico-Technical Institute, Polytehknicheskaya 26, 194021 St. Petersburg, Russian Federation

Ivchenko, E.L. (author): Ioffe Physico-Technical Institute, Polytehknicheskaya 26, 194021 St. Petersburg, Russian Federation

Lykov, D.N. (author): Ioffe Physico-Technical Institute, Polytehknicheskaya 26, 194021 St. Petersburg, Russian Federation

Ivanov, S.V. (author): Ioffe Physico-Technical Institute, Polytehknicheskaya 26, 194021 St. Petersburg, Russian Federation

Bergman, Peder (author): Linköpings universitet,Tekniska högskolan,Halvledarmaterial

Monemar, Bo (author): Linköpings universitet,Tekniska högskolan,Halvledarmaterial

Ioffe Physico-Technical Institute, Polytehknicheskaya 26, 194021 St Petersburg, Russian Federation Tekniska högskolan (creator_code:org_t)

Wiley, 2006
2006
English.
In: Physica status solidi. B, Basic research. - : Wiley. - 0370-1972 .- 1521-3951. ; 243:4, s. 819-826

Related links:: https://urn.kb.se/re...; show more...; https://doi.org/10.1...; show less...

Abstract Subject headings

We report on design, fabrication by molecular beam epitaxy, and photoluminescence (PL) studies of III-V/II-VI heterovalent structures containing a GaAs/AlGaAs/ZnSe/ZnCdMnSe double quantum well (QW). The studies of temperature-dependent and time-resolved PL have provided an insight into the nature of the exciton localization potential induced by the heterovalent interface. It is found that under the resonant conditions the observed emission mostly originates from the recombination of excitons confined in type II quantum-dot-like structures, where the holes are localised within the GaAs QW due to the well width fluctuations and the electrons are localized in the plane of the ZnCdMnSe QW due to the fluctuations of the conduction band offset at the heterovalent interface, induced by random variation of the interface microscopic structure. © 2006 WILEY-VCH Verlag GmbH & Co. KGaA,.

By the author/editor: Toropov, A.A.; Sedova, I.V.; Sorokin, S.V.; Terent'ev, Ya.V.; Ivchenko, E.L.; Lykov, D.N.; show more...; Ivanov, S.V.; Bergman, Peder; Monemar, Bo; show less...

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