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Measurement of micrometer diffusion lengths by nuclear spectrometry

Strokan, N.B. (author)
Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russian Federation
Ivanov, A.M. (author)
Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russian Federation
Lebedev, A.A. (author)
Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russian Federation
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Syväjärvi, Mikael (author)
Linköpings universitet,Tekniska högskolan,Halvledarmaterial
Yakimova, Rositsa (author)
Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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Ioffe Physicotechnical Institute, Russian Academy of Sciences, St Petersburg, 194021, Russian Federation Tekniska högskolan (creator_code:org_t)
Pleiades Publishing Ltd, 2005
2005
English.
In: Semiconductors (Woodbury, N.Y.). - : Pleiades Publishing Ltd. - 1063-7826 .- 1090-6479. ; 39:12, s. 1394-1398
  • Journal article (peer-reviewed)
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  • A method for determination of diffusion lengths in the range 0.5-50 µm, which corresponds to carrier lifetimes in the nanosecond range, is suggested A calibrated nonequilibrium charge is injected into the base of the reverse-biased diode structure. The injection is provided by alpha particles generated by natural decay in the single-particle counting mode. The nuclear spectrometry technique is used to measure the amount of charge that diffused across the base to the boundary of the electric-field region. The loss of charge during the diffusion is calculated as a function of the depth of alpha particle penetration beyond the electric-field region. The derived power-law functions make it possible to relate the diffusion length with the exponent and numerical factor that describes the loss of charge. The experiment is performed with lightly doped 4H-SiC epitaxial films. © 2005 Pleiades Publishing, Inc.

Keyword

TECHNOLOGY
TEKNIKVETENSKAP

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