Effects of separate carrier generation on the emission properties of InAs/GaAs quantum dots

Moskalenko, Evgenii (author): Linköpings universitet,Institutionen för fysik, kemi och biologi,Tekniska högskolan

Karlsson, Fredrik (author): Linköpings universitet,Institutionen för fysik, kemi och biologi,Tekniska högskolan

Donchev, V.T. (author): Faculty of Physics, Sofia University, 5, Boulevard James Bourchier, 1164-Sofia, Bulgaria

Holtz, Per-Olof (author): Linköpings universitet,Halvledarmaterial,Tekniska högskolan

Monemar, Bo (author): Linköpings universitet,Halvledarmaterial,Tekniska högskolan

Schoenfeld, W.V. (author): Materials Department, University of California, Santa Barbara, CA 93106

Petroff, P.M. (author): Materials Department, University of California, Santa Barbara, CA 93106

(creator_code:org_t)

2005-09-29
2005
English.
In: Nano letters (Print). - : American Chemical Society (ACS). - 1530-6984 .- 1530-6992. ; 5:11, s. 2117-2122

Related links:: https://urn.kb.se/re...; show more...; https://doi.org/10.1...; show less...

Abstract Subject headings

Individual quantum dots have been studied by means of microphotoluminescence with dual-laser excitation. The additional infrared laser influences the dot charge configuration and increases the dot luminescence intensity. This is explained in terms of separate generation of excess electrons and holes into the dot from the two lasers. With increasing dot density and/or sample temperature, the increase of the luminescence intensity vanishes progressively, while the possibility to control the dot charge remains. © 2005 American Chemical Society.

By the author/editor: Moskalenko, Evge ...; Karlsson, Fredri ...; Donchev, V.T.; Holtz, Per-Olof; Monemar, Bo; Schoenfeld, W.V.; show more...; Petroff, P.M.; show less...

About the subject

NATURAL SCIENCES: NATURAL SCIENCES; and Physical Science ...; and Atom and Molecul ...

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