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Donor-acceptor pair...
Donor-acceptor pair emission enhancement in mass-transport-grown GaN
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- Paskova, Tanja (author)
- Linköpings universitet,Tekniska högskolan,Institutionen för fysik, kemi och biologi,Linköping University,Universität Bremen
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- Arnaudov, B. (author)
- Faculty of Physics, Sofia University, Sofia 1164, Bulgaria,Sofijski universitet (Sveti Kliment Ohridski),Sofia University (St. Kliment Ohridski)
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- Paskov, Plamen (author)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial,Linköping University
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- Goldys, E.M. (author)
- Macquare University, Sydney, NSW 2109, Australia,Macquarie University
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- Hautakangas, S. (author)
- Helsinki University of Technology, Espoo 02015 HUT, Finland,Aalto-Yliopisto,Aalto University
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- Saarinen, K. (author)
- Helsinki University of Technology, Espoo 02015 HUT, Finland,Aalto-Yliopisto,Aalto University
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- Södervall, Ulf, 1954 (author)
- Södervall, U., Chalmers University of Technology, S-412 96 Göteborg, Sweden,Chalmers tekniska högskola,Chalmers University of Technology
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- Monemar, Bo (author)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial,Linköping University
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(creator_code:org_t)
- AIP Publishing, 2005
- 2005
- English.
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In: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 98:3, s. 033508-
- Related links:
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http://dx.doi.org/10...
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
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- A dominating donor-acceptor pair (DAP) emission at about 3.27 eV is observed in the photoluminescence and cathodoluminescence spectra of intentionally undoped mass-transport (MT)-grown GaN, while only a weak presence of the DAP emission is recorded in the as-grown hydride vapor phase epitaxial GaN. A comparative study of impurity and native defect incorporation in the as-grown and MT GaN was performed, showing a significant increase of oxygen and empty clusters involving Ga vacancy and oxygen in the MT GaN. Based on the observed results as well as on doping analysis of the structure and kinetic analysis of the emission intensities, we propose an acceptorlike complex, creating a state as a semiclassical potential well near the valence-band top due to the local tensile strain caused by the empty clusters to be responsible for the dominating behavior of the DAP emission. © 2005 American Institute of Physics.
Subject headings
- NATURVETENSKAP -- Fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences (hsv//eng)
Keyword
- TECHNOLOGY
- TEKNIKVETENSKAP
Publication and Content Type
- ref (subject category)
- art (subject category)
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