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Role of impurities and dislocations for the unintentional n-type conductivity in InN

Darakchieva, Vanya (author)
Linköpings universitet,Halvledarmaterial,Tekniska högskolan
Barradas, N P (author)
Institute Tecnol and Nucl, P-2686953 Sacavem, Portugal CFNUL, P-1649003 Lisbon, Portugal
Xie, Mengyao (author)
Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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Lorenz, K (author)
Institute Tecnol and Nucl, P-2686953 Sacavem, Portugal CFNUL, P-1649003 Lisbon, Portugal
Alves, E (author)
Institute Tecnol and Nucl, P-2686953 Sacavem, Portugal CFNUL, P-1649003 Lisbon, Portugal
Schubert, M (author)
University Nebraska, Department Elect Engn, Lincoln, NE 68588 USA
Persson, Per (author)
Linköpings universitet,Tunnfilmsfysik,Tekniska högskolan
Giuliani, Finn (author)
Linköpings universitet,Institutionen för fysik, kemi och biologi,Tekniska högskolan
Munnik, F (author)
Forschungszentrum Dresden Rossendorf, D-01314 Dresden, Germany
Hsiao, Ching-Lien (author)
Linköpings universitet,Institutionen för fysik, kemi och biologi,Tekniska högskolan
Tu, L W (author)
Natl Sun Yat Sen University, Department Phys, Kaohsiung 80424, Taiwan Natl Sun Yat Sen University, Centre Nanosci and Nanotechnol, Kaohsiung 80424, Taiwan
Schaff, W J (author)
Cornell University, Department Elect and Comp Engn, Ithaca, NY 14853 USA
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 (creator_code:org_t)
Elsevier BV, 2009
2009
English.
In: PHYSICA B-CONDENSED MATTER. - : Elsevier BV. - 0921-4526. ; 404:22, s. 4476-4481
  • Journal article (peer-reviewed)
Abstract Subject headings
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  • We present a study on the role of dislocations and impurities for the unintentional n-type conductivity in high-quality InN grown by molecular beam epitaxy. The dislocation densities and H profiles in films with free electron concentrations in the low 10(17) cm(-1) and mid 10(18) cm(-3) range are measured, and analyzed in a comparative manner. It is shown that dislocations alone could not account for the free electron behavior in the InN films. On the other hand, large concentrations of H sufficient to explain, but exceeding substantially, the observed free electron densities are found. Furthermore, enhanced concentrations of H are revealed at the film surfaces, resembling the free electron behavior with surface electron accumulation. The low-conductive film was found to contain C and it is suggested that C passivates the H donors or acts as an acceptor, producing compensated material in this case. Therefore, it is concluded that the unintentional impurities play an important role for the unintentional n-type conductivity in InN. We suggest a scenario of H incorporation in InN that may reconcile the previously reported observations for the different role of impurities and dislocations for the unintentional n-type conductivity in InN.

Keyword

TECHNOLOGY
TEKNIKVETENSKAP

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