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Electrical properti...
Electrical properties of the graphene/4H-SiC (0001) interface probed by scanning current spectroscopy
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- Sonde, S (author)
- CNR IMM, I-95121 Catania, Italy Scuola Super Catania, I-95123 Catania, Italy
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- Giannazzo, F (author)
- CNR IMM, I-95121 Catania, Italy
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- Raineri, V (author)
- CNR IMM, I-95121 Catania, Italy
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- Yakimova, Rositsa (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- -R Huntzinger, J (author)
- CNRS, GES, F-34095 Montpellier, France University Montpellier 2, F-34095 Montpellier 5, France
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- Tiberj, A (author)
- CNRS, GES, F-34095 Montpellier, France University Montpellier 2, F-34095 Montpellier 5, France
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- Camassel, J (author)
- CNRS, GES, F-34095 Montpellier, France University Montpellier 2, F-34095 Montpellier 5, France
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(creator_code:org_t)
- 2009
- 2009
- English.
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In: PHYSICAL REVIEW B. - 1098-0121. ; 80:24, s. 241406-
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
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- The current transport across the graphene/4H-SiC interface has been investigated with nanometric lateral resolution by scanning current spectroscopy on both epitaxial graphene (EG) grown on (0001) 4H-SiC and graphene exfoliated from highly oriented pyrolytic graphite deposited on the same substrate [deposited graphene (DG)]. This study reveals that the Schottky barrier height (SBH) of EG/4H-SiC (0.36 +/- 0.1 eV) is similar to 0.49 eV lower than the SBH of DG/4H-SiC (0.85 +/- 0.06 eV). This result is discussed in terms of the Fermi-level pinning similar to 0.49 eV above the Dirac point in EG due to the presence of positively charged states at the interface between the Si face of 4H-SiC and the carbon-rich buffer layer, which is the precursor for EG formation.
Keyword
- electric properties
- epitaxial layers
- Fermi level
- graphene
- interface structure
- nanostructured materials
- Schottky barriers
- silicon compounds
- TECHNOLOGY
- TEKNIKVETENSKAP
Publication and Content Type
- ref (subject category)
- art (subject category)
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