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Mid/far-infrared detection using a MESFET with B-modulation doped Ge-dot/SiGe-well multiple stacks in the channel region
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- Adnane, Bouchaib (author)
- Linköpings universitet,Yt- och Halvledarfysik,Tekniska högskolan
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- Elfving, Anders (author)
- Linköpings universitet,Yt- och Halvledarfysik,Tekniska högskolan
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- Zhao, Ming (author)
- Linköpings universitet,Yt- och Halvledarfysik,Tekniska högskolan
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- ISBN 0780384741
- IEEE, 2004
- 2004
- English.
- Conference paper (peer-reviewed)
Abstract
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- Multiple modulation-doped Ge-dot/SiGe-QW stack structures were grown using MBE, and processed as FET devices for mid/far infrared detection. From a non-optimized device, a broadband photoresponse has been observed in the mid-infrared range of 3-15 μm. A peak responsivity was estimated to be as high as 100 mA/W at T= 20 K. This work indicates that SiGE QD/QW structures using the lateral transport geometry can be a potential candidate for photodetectors operating in far-infrared range.
Keyword
- NATURAL SCIENCES
- NATURVETENSKAP
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- kon (subject category)
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- Adnane, Bouchaib
- Elfving, Anders
- Zhao, Ming
- Larsson, Mats
- Magnuson, Bengt
- Ni, Wei-Xin
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- Linköping University
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