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Origin of photoresp...
Origin of photoresponse at 8-14 μm in stacks of self-assembled SiGe/Si quantum dots
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- Adnane, Bouchaib (author)
- Linköpings universitet,Yt- och Halvledarfysik,Tekniska högskolan
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- Karlsson, Fredrik (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Zhao, Ming (author)
- Linköpings universitet,Yt- och Halvledarfysik,Tekniska högskolan
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- Hansson, Göran (author)
- Linköpings universitet,Yt- och Halvledarfysik,Tekniska högskolan
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- Holtz, Per-Olof, 1951- (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Ni, Wei-Xin (author)
- Linköpings universitet,Yt- och Halvledarfysik,Tekniska högskolan
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(creator_code:org_t)
- 2009
- 2009
- English.
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In: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X.
- Related links:
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https://urn.kb.se/re...
Abstract
Subject headings
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- A normal incidence photodetector operating at 8-14 μm is demonstrated using p-type δ-doped SiGe dot multilayer structures grown by molecular beam epitaxy on Si(001) substrates. Based on the experimental results of photoluminescence and photoluminescence excitation spectroscopies together with numerical analysis, the origin of the measured photocurrent was attributed to intersubband optical transitions between the heavy hole and light hole states of the valence band of the self-assembled SiGe dots and subsequent lateral transport of photo-excited carriers in the conduction channels formed by Ge wetting layers.
Keyword
- NATURAL SCIENCES
- NATURVETENSKAP
Publication and Content Type
- vet (subject category)
- art (subject category)
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