Search: onr:"swepub:oai:DiVA.org:liu-53204" >
Spatially direct an...
Spatially direct and indirect transitions of self-assembled SiGe/Si quantum dots studied by photoluminescence excitation spectroscopy
-
- Adnane, Bouchaib (author)
- Linköpings universitet,Yt- och Halvledarfysik,Tekniska högskolan
-
- Karlsson, Fredrik (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
-
- Hansson, Göran (author)
- Linköpings universitet,Yt- och Halvledarfysik,Tekniska högskolan
-
show more...
-
- Holtz, Per-Olof, 1951- (author)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
-
- Ni, Wei-Xin (author)
- Linköpings universitet,Yt- och Halvledarfysik,Tekniska högskolan
-
show less...
-
(creator_code:org_t)
- AIP Publishing, 2010
- 2010
- English.
-
In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 96:18, s. 181107-
- Related links:
-
https://liu.diva-por... (primary) (Raw object)
-
show more...
-
http://liu.diva-port...
-
https://urn.kb.se/re...
-
https://doi.org/10.1...
-
show less...
Abstract
Subject headings
Close
- Well-resolved photoluminescence excitation (PLE) spectra are reported for selfassembled SiGe dots grown on Si(100) by molecular beam epitaxy. The observation of two excitation resonance peaks is attributed to two different excitation/de-excitation routes of interband optical transitions connected to the spatially direct and indirect recombination processes. It is concluded that two dot populations are addressed by each monitored luminescence energy for the PLE acquisition.
Keyword
- Ge-Si alloys
- luminescence
- molecular beam epitaxial growth
- self-assembly
- semiconductor quantum dots
- NATURAL SCIENCES
- NATURVETENSKAP
Publication and Content Type
- ref (subject category)
- art (subject category)
Find in a library
To the university's database