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Si/SiGe/Si : Er : O...
Si/SiGe/Si : Er : O light-emitting transistors prepared by differential molecular-beam epitaxy
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- Du, Chun-Xia (author)
- Linköpings universitet,Institutionen för fysik, kemi och biologi,Tekniska högskolan
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- Duteil, Fabrice (author)
- Linköpings universitet,Institutionen för fysik, kemi och biologi,Tekniska högskolan
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- Hansson, Göran (author)
- Linköpings universitet,Yt- och Halvledarfysik,Tekniska högskolan
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- Ni, Wei-Xin (author)
- Linköpings universitet,Yt- och Halvledarfysik,Tekniska högskolan
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(creator_code:org_t)
- AIP Publishing, 2001
- 2001
- English.
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In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 78:12, s. 1697-1699
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
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- Si/SiGe/Si:Er:O heterojunction bipolar transistor (HBT) type light-emitting devices with Er3+ ions incorporated in the collector region have been fabricated using a layered structure grown by differential molecular-beam epitaxy. Electroluminescence measurements on processed light-emitting HBTs can be performed in either constant driving current mode or constant applied bias mode, which is an important advantage over conventional Si:Er light-emitting diodes. Intense room-temperature light emission at the Er3+ characteristic wavelength of 1.54 mum has been observed at low driving current density, e.g., 0.1 A cm(-2), and low applied bias, e.g., 3 V, across the collector and emitter. (C) 2001 American Institute of Physics.
Keyword
- TECHNOLOGY
- TEKNIKVETENSKAP
Publication and Content Type
- ref (subject category)
- art (subject category)
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