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Thermal instability...
Thermal instability of implanted Mn ions in ZnO
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- Sans, J A (author)
- European Synchrotron Radiation Facility
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- Martinez-Criado, G (author)
- European Synchrotron Radiation Facility
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- Susini, J (author)
- European Synchrotron Radiation Facility
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- Sanz, R (author)
- CSIC
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- Jensen, Jens (author)
- Linköpings universitet,Institutionen för fysik, kemi och biologi,Tekniska högskolan
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- Minguez, I (author)
- CSIC
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- Hernandez-Velez, M (author)
- University Autonoma Madrid
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- Labrador, A (author)
- ESRF
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- Carpentier, P (author)
- CNRS CEA UJF
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(creator_code:org_t)
- AIP Publishing, 2010
- 2010
- English.
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In: JOURNAL OF APPLIED PHYSICS. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 107:2, s. 023507-
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Abstract
Subject headings
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- This letter reports on the site configuration of implanted Mn cations in ZnO. The samples studied were obtained by means of ion implantation in m-plane ZnO single crystals. Synchrotron radiation based fluorescence shows no contamination during the implantation process. The results of micro-x-ray absorption spectroscopy indicate that Mn ions are located in substitutional sites without detectable traces of secondary phases. The postgrowth thermal annealing in O-2 atmosphere induces a change in the coordination of a large amount of Mn cations, corresponding to alpha-Mn2O3.
Keyword
- annealing
- ferromagnetic materials
- fluorescence
- II-VI semiconductors
- ion implantation
- manganese
- semiconductor growth
- semimagnetic semiconductors
- synchrotron radiation
- wide band gap semiconductors
- X-ray absorption spectra
- zinc compounds
- TECHNOLOGY
- TEKNIKVETENSKAP
Publication and Content Type
- ref (subject category)
- art (subject category)
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