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Thermal instability of implanted Mn ions in ZnO

Sans, J A (author)
European Synchrotron Radiation Facility
Martinez-Criado, G (author)
European Synchrotron Radiation Facility
Susini, J (author)
European Synchrotron Radiation Facility
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Sanz, R (author)
CSIC
Jensen, Jens (author)
Linköpings universitet,Institutionen för fysik, kemi och biologi,Tekniska högskolan
Minguez, I (author)
CSIC
Hernandez-Velez, M (author)
University Autonoma Madrid
Labrador, A (author)
ESRF
Carpentier, P (author)
CNRS CEA UJF
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 (creator_code:org_t)
AIP Publishing, 2010
2010
English.
In: JOURNAL OF APPLIED PHYSICS. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 107:2, s. 023507-
  • Journal article (peer-reviewed)
Abstract Subject headings
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  • This letter reports on the site configuration of implanted Mn cations in ZnO. The samples studied were obtained by means of ion implantation in m-plane ZnO single crystals. Synchrotron radiation based fluorescence shows no contamination during the implantation process. The results of micro-x-ray absorption spectroscopy indicate that Mn ions are located in substitutional sites without detectable traces of secondary phases. The postgrowth thermal annealing in O-2 atmosphere induces a change in the coordination of a large amount of Mn cations, corresponding to alpha-Mn2O3.

Keyword

annealing
ferromagnetic materials
fluorescence
II-VI semiconductors
ion implantation
manganese
semiconductor growth
semimagnetic semiconductors
synchrotron radiation
wide band gap semiconductors
X-ray absorption spectra
zinc compounds
TECHNOLOGY
TEKNIKVETENSKAP

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art (subject category)

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