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Electron spin filte...
Electron spin filtering by thin GaNAs/GaAs multiquantum wells
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- Puttisong, Yuttapoom (author)
- Linköpings universitet,Tekniska högskolan,Funktionella elektroniska material
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- Wang, Xingjun (author)
- Linköpings universitet,Funktionella elektroniska material,Tekniska högskolan
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- Buyanova, Irina (author)
- Linköpings universitet,Funktionella elektroniska material,Tekniska högskolan
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- Carrere, H (author)
- Université de Toulouse, LPCNO: INSA, UPS, CNRS, 135 avenue de Rangueil, 31077 Toulouse Cedex, France
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- Zhao, F (author)
- Université de Toulouse, LPCNO: INSA, UPS, CNRS, 135 avenue de Rangueil, 31077 Toulouse Cedex, France
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- Balocchi, A (author)
- Université de Toulouse, LPCNO: INSA, UPS, CNRS, 135 avenue de Rangueil, 31077 Toulouse Cedex, France
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- Marie, X (author)
- Université de Toulouse, LPCNO: INSA, UPS, CNRS, 135 avenue de Rangueil, 31077 Toulouse Cedex, France
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- Tu, C W (author)
- Department of Electrical and Computer Engineering, University of California, La Jolla, California 92093, USA
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- Chen, Weimin (author)
- Linköpings universitet,Funktionella elektroniska material,Tekniska högskolan
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(creator_code:org_t)
- AIP Publishing, 2010
- 2010
- English.
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In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 96:5, s. 052104-
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Abstract
Subject headings
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- Effectiveness of the recently discovered defect-engineered spin-filtering effect is closely examined in GaNAs/GaAs multiquantum wells (QWs) as a function of QW width. In spite of narrow well widths of 3-9 nm, rather efficient spin filtering is achieved at room temperature. It leads to electron spin polarization larger than 18% and an increase in photoluminescence intensity by 65% in the 9 nm wide QWs. A weaker spin filtering effect is observed in the narrower QWs, mainly due to a reduced sheet concentration of spin-filtering defects (e.g., Ga-i interstitial defects).
Subject headings
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Keyword
- electron spin polarisation
- gallium arsenide
- III-V semiconductors
- nitrogen compounds
- photoluminescence
- semiconductor quantum wells
- TECHNOLOGY
- TEKNIKVETENSKAP
- Semiconductor physics
- Halvledarfysik
Publication and Content Type
- ref (subject category)
- art (subject category)
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