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Evidence for a phos...
Evidence for a phosphorus-related interfacial defect complex at a GaP/GaNP heterojunction
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- Dagnelund, Daniel, 1980- (author)
- Linköpings universitet,Funktionella elektroniska material,Tekniska högskolan
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- Vorona, I. P (author)
- Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kiev, Ukraine
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- Vlasenko, L. S. (author)
- A. F. Ioffe Physico-Technical Institute, St. Petersburg, Russia
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- Wang, X. J. (author)
- Linköpings universitet,Funktionella elektroniska material,Tekniska högskolan
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- Utsumi, A. (author)
- Department of Electrical and Electronic Engineering, Toyohashi University of Technology, Toyohashi, Aichi, Japan
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- Furukawa, Y. (author)
- Department of Electrical and Electronic Engineering, Toyohashi University of Technology, Toyohashi, Aichi, Japan
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- Wakahara, A. (author)
- Department of Electrical and Electronic Engineering, Toyohashi University of Technology, Toyohashi, Aichi, Japan
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- Yonezu, H. (author)
- Department of Electrical and Electronic Engineering, Toyohashi University of Technology, Toyohashi, Aichi, Japan
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- Buyanova, I. A. (author)
- Linköpings universitet,Funktionella elektroniska material,Tekniska fakulteten
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- Chen, W. M. (author)
- Linköpings universitet,Funktionella elektroniska material,Tekniska fakulteten
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(creator_code:org_t)
- The American Physical Society, 2010
- 2010
- English.
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In: Physical Review B. Condensed Matter and Materials Physics. - : The American Physical Society. - 1098-0121 .- 1550-235X. ; 81, s. 115334-
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https://liu.diva-por... (primary) (Raw object)
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https://urn.kb.se/re...
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Abstract
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- Optically detected magnetic resonance (ODMR) studies of molecular beam epitaxial GaNP/GaP structures reveal presence of a P-related complex defect, evident from its resolved hyperfine interaction between an unpaired electronic spin (S=1/2) and a nuclear spin (I = ½) of a 31P atom. The principal axis of the defect is concluded to be along a <111> crystallographic direction from angular dependence of the ODMR spectrum, restricting the P atom (either a PGa antisite or a Pi interstitial) and its partner in the complex defect to be oriented along this direction. The principal values of the electronic g-tensor and hyperfine interaction tensor are determined as: g┴=2.013, g║=2.002, and A┴=130´10-4 cm-1, A║=330´10-4 cm-1, respectively. The interface nature of the defect is clearly manifested by the absence of the ODMR lines originating from two out of four equivalent <111> orientations. Defect formation is shown to be facilitated by nitrogen ion bombardment under non-equilibrium growth conditions and the defect is thermally stable upon post-growth thermal annealing.
Subject headings
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Keyword
- Semiconductor physics
- Halvledarfysik
Publication and Content Type
- ref (subject category)
- art (subject category)
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- By the author/editor
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Dagnelund, Danie ...
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Vorona, I. P
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Vlasenko, L. S.
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Wang, X. J.
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Utsumi, A.
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Furukawa, Y.
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show more...
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Wakahara, A.
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Yonezu, H.
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Buyanova, I. A.
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Chen, W. M.
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- About the subject
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- NATURAL SCIENCES
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NATURAL SCIENCES
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and Physical Science ...
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and Condensed Matter ...
- Articles in the publication
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Physical Review ...
- By the university
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Linköping University