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Suppressing phospho...
Suppressing phosphorus diffusion in germanium by carbon incorporation
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- Luo, G (author)
- National Nano Device Labs
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- Cheng, CC (author)
- National Nano Device Labs
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- Huang, CY (author)
- National Nano Device Labs
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- Hsu, SL (author)
- National Nano Device Labs
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- Chien, CH (author)
- National Nano Device Labs
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- Ni, Wei-Xin (author)
- National Nano Device Labs
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- Chang, CY (author)
- National Nano Device Labs
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(creator_code:org_t)
- Iet, 2005
- 2005
- English.
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In: Electronics Letters. - : Iet. - 0013-5194 .- 1350-911X. ; 41:24, s. 1354-1355
- Related links:
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https://ir.nctu.edu....
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
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- A problem in the Ge MOSFET process is that the phosphor-us for n-type doping in Ge diffuses very fast. It is very difficult to form the shallow source/drain p-n junctions. It is reported, for the first time, that the phosphorus diffusion in Ge during activation (or annealing) can be suppressed effectively owing to carbon incorporation.
Keyword
- TECHNOLOGY
- TEKNIKVETENSKAP
Publication and Content Type
- ref (subject category)
- art (subject category)
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