Photoluminescence spectra of doped GaAs films

Fu, Ying,1964Chalmers University of Technology,Chalmers tekniska högskola (author)

We have studied the dependence of the photoluminescence (PL) spectrum on the doping level and the film thickness of n-GaAs thin films, both experimentally and theoretically. It has been shown theoretically that modification of the PL spectrum of p-type material by p-type doping is very small due to the large valence-band hole effective mass. The PL spectrum of n-type material is affected by two factors: (1) the electron concentration which determines the Fermi level in the material; (2) the thickness of the film due to re-absorption of the PL signal. For the n-type GaAs thin films under current investigation, the doping level as well as the film thickness can be very well calibrated by the PL spectrum when the doping level is less than 2 x 10(18) cm(-3) and the film thickness is in the range of the penetration length of the PL excitation laser.

Willander, MagnusChalmers University of Technology,Chalmers tekniska högskola(Swepub:cth)xwilma (author)
Chen, GBChinese Academy of Sciences (author)
Ji, YLChinese Academy of Sciences (author)
Lu, WChinese Academy of Sciences (author)
Li, Y.L.Chinese Academy of Sciences (author)
Chalmers University of TechnologyChalmers tekniska högskola (creator_code:org_t)

In:Applied Physics A: Springer Science Business Media79:3, s. 619-6230947-83961432-0630

By the author/editor: Fu, Ying, 1964; Willander, Magnu ...; Chen, GB; Ji, YL; Lu, W; Li, Y.L.

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