Atomic force microscope current-imaging study for current density through nanocrystalline silicon dots embedded in SiO2

Fu, Y (author): Gothenburg University,Göteborgs universitet,Institutionen för fysik (GU),Department of Physics (GU),University of Goteborg and Chalmers University of Technology

Willander, Magnus (author): Gothenburg University,Göteborgs universitet,Institutionen för fysik (GU),Department of Physics (GU),University of Goteborg and Chalmers University of Technology

(creator_code:org_t)

Japan Society of Applied Physics / Japanese Journal of Applied Physics; 1999, 2005
2005
English.
In: Japanese Journal of Applied Physics. - : Japan Society of Applied Physics / Japanese Journal of Applied Physics; 1999. - 0021-4922 .- 1347-4065. ; 44:07-Jan, s. L88-L91

Related links:: https://urn.kb.se/re...; show more...; https://doi.org/10.1...; https://gup.ub.gu.se...; show less...

Abstract Subject headings

Simultaneous surface and current imaging through nanocrystalline silicon (nc-Si) dots embedded in SiO2 was achieved using a contact mode atomic force microscope (AFM) under a tip-to-sample bias voltages of about 5 V. The obtained images were then analyzed using a one-dimensional model of current density, which took account of the spherical shape of the nc-Si dots, the substrate orientation and the sample bias. A comparison between the experimental and theoretical results showed a fair agreement when the current pass through the dot center, although a large difference was found at a higher voltage. In addition, our model predicted tunneling current oscillations due to a change in tip position relative to the dot center.

By the author/editor: Salem, MA; Mizuta, H; Oda, S; Fu, Y; Willander, Magnu ...

About the subject

Kungliga biblioteket hanterar dina personuppgifter i enlighet med EU:s dataskyddsförordning (2018), GDPR. Läs mer om hur det funkar här.
Så här hanterar KB dina uppgifter vid användning av denna tjänst.