Atomic force microscope current-imaging study for current density through nanocrystalline silicon dots embedded in SiO2

Japan Society of Applied Physics / Japanese Journal of Applied Physics; 1999,2005
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Simultaneous surface and current imaging through nanocrystalline silicon (nc-Si) dots embedded in SiO2 was achieved using a contact mode atomic force microscope (AFM) under a tip-to-sample bias voltages of about 5 V. The obtained images were then analyzed using a one-dimensional model of current density, which took account of the spherical shape of the nc-Si dots, the substrate orientation and the sample bias. A comparison between the experimental and theoretical results showed a fair agreement when the current pass through the dot center, although a large difference was found at a higher voltage. In addition, our model predicted tunneling current oscillations due to a change in tip position relative to the dot center.

Mizuta, HTokyo Institute of Technolog (author)
Oda, STokyo Institute of Technolog (author)
Fu, YGothenburg University,Göteborgs universitet,Institutionen för fysik (GU),Department of Physics (GU),University of Goteborg and Chalmers University of Technology (author)
Willander, MagnusGothenburg University,Göteborgs universitet,Institutionen för fysik (GU),Department of Physics (GU),University of Goteborg and Chalmers University of Technology(Swepub:gu)xwilma (author)
Tokyo Institute of TechnologInstitutionen för fysik (GU) (creator_code:org_t)

In:Japanese Journal of Applied Physics: Japan Society of Applied Physics / Japanese Journal of Applied Physics; 199944:07-Jan, s. L88-L910021-49221347-4065

By the author/editor: Salem, MA; Mizuta, H; Oda, S; Fu, Y; Willander, Magnu ...

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