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The EI4 EPR centre ...
The EI4 EPR centre in 6H SiC
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- Carlsson, Patrick, 1975- (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Son, Nguyen Tien (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Magnusson, Björn (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Isoya, J. (author)
- University of Tsukuba
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- Morishita, N. (author)
- Japan Atomic Energy Agency
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- Ohshima, T. (author)
- Japan Atomic Energy Agency
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- Janzén, Erik (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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(creator_code:org_t)
- IOP Publishing, 2010
- 2010
- English.
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In: Physica Scripta, Vol. T141. - : IOP Publishing. ; , s. 014013-
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
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- We present the results of our recent electron paramagnetic resonance (EPR) studies of the EI4 EPR centre in electron-irradiated high-purity semi-insulating 6H SiC. Higher signal intensities and better resolution compared with previous studies have enabled a more detailed study of the hyperfine (hf) structure. Based on the observed hf structure due to the interaction with Si and C neighbours, the effective spin S = 1, the C-1h-symmetry and the annealing behaviour, we suggest a carbon vacancy-carbon antisite complex in the neutral charge state, VCVCCSi0, with the vacancies and the antisite in the basal plane, as a new defect model for the centre.
Keyword
- NATURAL SCIENCES
- NATURVETENSKAP
Publication and Content Type
- ref (subject category)
- kon (subject category)
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