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Epitaxial growth of...
Epitaxial growth of AlN layers on SiC substrates in a hot-wall MOCVD system
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- Kakanakova-Georgieva, Anelia, 1970- (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Persson, P.O.A. (author)
- Linköpings universitet,Institutionen för fysik, kemi och biologi,Tekniska högskolan
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- Forsberg, Urban (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Birch, Jens (author)
- Linköpings universitet,Tunnfilmsfysik,Tekniska högskolan
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- Hultman, Lars, 1960- (author)
- Linköpings universitet,Tunnfilmsfysik,Tekniska högskolan
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- Janzén, Erik (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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(creator_code:org_t)
- 2002-12-19
- 2002
- English.
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In: Phys. Stat. Sol. (c), Vol. 0, Issue 1. - : Wiley. ; , s. 205-208
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
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- In this study we report the successful growth of AlN and AlN/GaN on SiC substrates in a MOCVD process based on a hot-wall susceptor design. Different features of AlN growth are established depending on the total reactor pressure, temperature, off-cut SiC substrate orientation and V-to-III gas-flow ratio. The feasibility of the hot-wall MOCVD concept is demonstrated by the performance of AlN/GaN structures with state-of-the-art properties with strong potential for further optimization. A narrower X-ray rocking curve over the asymmetric 10.4 than the symmetric 00.2 reflection clearly underlines the high overall crystal quality of the GaN layers on AlN buffers grown in this type of MOCVD reactor.
Keyword
- TECHNOLOGY
- TEKNIKVETENSKAP
Publication and Content Type
- ref (subject category)
- kon (subject category)
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