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Phosphorus-related ...
Phosphorus-related interfacial defect complex at a GaP/GaNP heterojunction
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- Dagnelund, Daniel (author)
- Linköpings universitet,Funktionella elektroniska material,Tekniska högskolan
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- Vorona, Igor P (author)
- Linköpings universitet,Funktionella elektroniska material,Tekniska högskolan
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- Vlasenko, Leonid S (author)
- Linköpings universitet,Funktionella elektroniska material,Tekniska högskolan
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- Wang, Xingjun (author)
- Linköpings universitet,Funktionella elektroniska material,Tekniska högskolan
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- Utsumi, A (author)
- University of Technology, Toyohashi, Aichi, Japan
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- Furukawa, Y (author)
- University of Technology, Toyohashi, Aichi, Japan
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- Wakahara, A (author)
- University of Technology, Toyohashi, Aichi, Japan
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- Yonezu, H (author)
- University of Technology, Toyohashi, Aichi, Japan
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- Buyanova, Irina A (author)
- Linköpings universitet,Funktionella elektroniska material,Tekniska högskolan
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- Chen, Weimin (author)
- Linköpings universitet,Funktionella elektroniska material,Tekniska högskolan
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(creator_code:org_t)
- 2010
- 2010
- English.
- Related links:
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https://urn.kb.se/re...
Abstract
Subject headings
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- For full exploration of dilute nitrides in device applications, a better understanding and control of defects located at interfaces involving e.g. Ga(In)NP are required. In this work we report on the first identification of a point defect situated at an interface between two semiconductors: GaNP and GaP. The defect is concluded to be a complex involving a P antisite or a P interstitial in its core, partnered with a neighboring impurity/defect aligned along a <111> direction, from detailed angular dependence studies of the optically detected magnetic resonance (ODMR) spectra at both X- and Q-band microwave frequencies. The principal g and A values, g┴=2.013, g║=2.002, A┴=130x10-4 cm-1 and A║=330x10-4 cm-1, are obtained from a spin Hamiltonian analysis. The interface nature of the defect is clearly evident from the absence of the ODMR lines originating from two out of four equivalent <111> orientations. Defect formation is shown to be facilitated by severe nitrogen ion bombardment under non-equilibrium growth conditions during solid-source molecular beam epitaxy and the defect is thermally stable upon post-growth thermal annealing.
Subject headings
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Keyword
- Semiconductor physics
- Halvledarfysik
Publication and Content Type
- vet (subject category)
- kon (subject category)
To the university's database
- By the author/editor
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Dagnelund, Danie ...
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Vorona, Igor P
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Vlasenko, Leonid ...
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Wang, Xingjun
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Utsumi, A
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Furukawa, Y
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show more...
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Wakahara, A
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Yonezu, H
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Buyanova, Irina ...
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Chen, Weimin
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show less...
- About the subject
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- NATURAL SCIENCES
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NATURAL SCIENCES
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and Physical Science ...
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and Condensed Matter ...
- By the university
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Linköping University