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Optical properties of functionalized GaN nanowires
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- Hsu, Chih-Wei (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Ganguly, Abhijit (author)
- National Taiwan University
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- Chen, Chin-Pei (author)
- National Taiwan University
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- (creator_code:org_t)
- American Institute of Physics, 2011
- 2011
- English.
- In: JOURNAL OF APPLIED PHYSICS. - : American Institute of Physics. - 0021-8979 .- 1089-7550. ; 109:5, s. 053523-
- Journal article (peer-reviewed)
Abstract
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- The evolution of the optical properties of GaN nanowires (NWs) with respect to a sequence of surface functionalization processes is reported; from pristine hydroxylated to finally, 3-mercaptopropyltrimethoxysilane (MPTMS) functionalized GaN NWs. Photoluminescence, Raman, stationary, and time-resolved photoluminescence measurements were applied to investigate the GaN NWs with different surface conditions. A documented surface passivation effect of the GaN NWs induced by the MPTMS functionalization is determined based on our characterization results. A hypothesis associated with the surface band bending and the defect levels near the band edges is proposed to explain the observed experimental results.
Keyword
- TECHNOLOGY
- TEKNIKVETENSKAP
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- art (subject category)
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- Hsu, Chih-Wei
- Ganguly, Abhijit
- Chen, Chin-Pei
- Kuo, Chun-Chiang
- Paskov, Plamen
- Holtz, Per-Olof
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- Chen, Li-Chyong
- Chen, Kuei-Hsien
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