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Effect of postgrowt...
Effect of postgrowth hydrogen treatment on defects in GaNP
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- Dagnelund, Daniel (author)
- Linköpings universitet,Funktionella elektroniska material,Tekniska högskolan
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- Wang, Xingjun (author)
- Linköpings universitet,Funktionella elektroniska material,Tekniska högskolan
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- Tu, C W (author)
- University of California San Diego
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- Polimeni, A (author)
- University Roma La Sapienza
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- Capizzi, M (author)
- University Roma La Sapienza
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- Chen, Weimin (author)
- Linköpings universitet,Funktionella elektroniska material,Tekniska högskolan
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- Buyanova, Irina (author)
- Linköpings universitet,Funktionella elektroniska material,Tekniska högskolan
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(creator_code:org_t)
- American Institute of Physics, 2011
- 2011
- English.
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In: APPLIED PHYSICS LETTERS. - : American Institute of Physics. - 0003-6951 .- 1077-3118. ; 98:14, s. 141920-
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Abstract
Subject headings
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- Effect of postgrowth hydrogen treatment on defects and their role in carrier recombination in GaNP alloys is examined by photoluminescence (PL) and optically detected magnetic resonance. We present direct experimental evidence for effective activation of several defects by low-energy subthreshold hydrogen treatment (andlt;= 100 eV H ions). Among them, two defect complexes are identified to contain a Ga interstitial. Possible mechanisms for the H-induced defect activation and creation are discussed. Carrier recombination via these defects is shown to efficiently compete with the near band-edge PL, explaining the observed degraded optical quality of the alloys after the H treatment.
Keyword
- TECHNOLOGY
- TEKNIKVETENSKAP
Publication and Content Type
- ref (subject category)
- art (subject category)
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