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Free electron prope...
Free electron properties and hydrogen in InN grown by MOVPE
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- Darakchieva, Vanya (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Xie, Mengyao (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Rogalla, D (author)
- Ruhr-Universität Bochum, Bochum, Germany
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- Becker, H-W (author)
- Ruhr-Universität Bochum, Bochum, Germany
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- Lorenz, K (author)
- Instituto Tecnológico e Nuclear, Sacavém, Portugal
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- Alves, E (author)
- Instituto Tecnológico e Nuclear, Sacavém, Portugal
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- Ruffenach, S (author)
- Groupe d'Etude des Semiconducteurs, Université Montpellier II, Montpellier, France
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- Moret, M (author)
- Groupe d'Etude des Semiconducteurs, Université Montpellier II, Montpellier, France
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- Briot, O (author)
- Groupe d'Etude des Semiconducteurs, Université Montpellier II, Montpellier, France
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(creator_code:org_t)
- 2011-02-15
- 2011
- English.
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In: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. - : WILEY-BLACKWELL, COMMERCE PLACE, 350 MAIN ST, MALDEN 02148, MA USA. - 1862-6300. ; 208:5, s. 1179-1182
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
Close
- In this work we present a comprehensive study on the hydrogen impurities, free electron, and structural properties of MOVPE InN films with state-of-the-art quality. We find a correlation between the decrease of free electron concentration and the reduction of bulk hydrogen in the films upon thermal annealing, while no changes in the dislocation densities and strain are observed. Our results suggest that hydrogen is a major source for the unintentional n-type doping in MOVPE InN.
Keyword
- free electron properties
- hydrogen
- InN
- unintentional doping
- TECHNOLOGY
- TEKNIKVETENSKAP
Publication and Content Type
- ref (subject category)
- art (subject category)
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