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Effect of initial substrate conditions on growth of cubic silicon carbide
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- Vasiliauskas, Remigijus (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Marinova, M. (author)
- Aristotle University Thessaloniki
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- Syväjärvi, Mikael (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- (creator_code:org_t)
- Elsevier Science B.V., Amsterdam. 2011
- 2011
- English.
- In: Journal of Crystal Growth. - : Elsevier Science B.V., Amsterdam.. - 0022-0248 .- 1873-5002. ; 324:1, s. 7-14
- Journal article (peer-reviewed)
Abstract
Subject headings
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- In order to analyze the epitaxial growth of cubic silicon carbide by sublimation epitaxy on different substrates, four different 6H-SiC substrate preparations were used: (i) as-received, (ii) re-polished, (iii) annealed and covered by silicon layer and (iv) with (1 1 1) 3C-SiC buffer layer. Almost 100% coverage and low twin density was achieved when grown on the buffer layer. The XRD and TEM characterizations show better material quality when the layer is grown directly on 6H-SiC substrates. Background doping evaluated by LTPL is in the range of 10(16) cm(-3) for N and 10(16) cm(-3) for Al in all grown layers.
Keyword
- Nucleation; Characterization; Substrates; Vapor phase epitaxy; Cubic silicon carbide
- TECHNOLOGY
- TEKNIKVETENSKAP
Publication and Content Type
- ref (subject category)
- art (subject category)
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