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Deep levels in iron...
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Beyer, FranziskaLinköpings universitet,Halvledarmaterial,Tekniska högskolan
(author)
Deep levels in iron doped n- and p-type 4H-SiC
- Article/chapterEnglish2011
Publisher, publication year, extent ...
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American Institute of Physics (AIP),2011
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electronicrdacarrier
Numbers
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LIBRIS-ID:oai:DiVA.org:liu-70352
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https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-70352URI
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https://doi.org/10.1063/1.3669401DOI
Supplementary language notes
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Language:English
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Summary in:English
Part of subdatabase
Classification
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Subject category:ref swepub-contenttype
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Subject category:art swepub-publicationtype
Notes
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funding agencies|Swedish Research Council (VR)||Swedish Energy Agency||
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Deep levels were detected in Fe-doped n- and p-type 4H-SiC using deep level transient spectroscopy (DLTS). One defect level (EC 0.39 eV) was detected in n-type material. DLTS spectra of p-type 4H-SiC show two dominant peaks (EV + 0.98 eV and EV + 1.46 eV). Secondary ion mass spectrometry measurements confirm the presence of Fe in both n- and p-type 4H-SiC epitaxial layers. The majority capture process for all the three Fe-related peaks is multi-phonon assisted. Similar defect behavior in Si indicates that the observed DLTS peaks are likely related to Fe and Fe-B pairs.
Subject headings and genre
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crystal microstructure
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vacancies
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defects
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radiation effects
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semiconductors
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NATURAL SCIENCES
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NATURVETENSKAP
Added entries (persons, corporate bodies, meetings, titles ...)
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Hemmingsson, CarlLinköpings universitet,Halvledarmaterial,Tekniska högskolan(Swepub:liu)carhe91
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Leone, StefanoLinköpings universitet,Halvledarmaterial,Tekniska högskolan(Swepub:liu)stele19
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Lin, Y.-C.Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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Gällström, HenrikLinköpings universitet,Halvledarmaterial,Tekniska högskolan(Swepub:liu)andga78
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Henry, AnneLinköpings universitet,Halvledarmaterial,Tekniska högskolan(Swepub:liu)annhe32
(author)
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Janzén, ErikLinköpings universitet,Halvledarmaterial,Tekniska högskolan(Swepub:liu)erija14
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Linköpings universitetHalvledarmaterial
(creator_code:org_t)
Related titles
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In:Journal of Applied Physics: American Institute of Physics (AIP)110, s. 123701-1-123701-50021-89791089-7550
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