Unintentional incorporation of hydrogen in wurtzite InN with different surface orientations

Darakchieva, VanyaLinköpings universitet,Halvledarmaterial,Tekniska högskolan (author)

Funding Agencies|FCT Portugal|PTDC/FIS/100448/2008|Swedish Research Council (VR)|2010-3848|
We have studied hydrogen impurities and related structural properties in state-of-the-art wurtzite InN films with polar, nonpolar, and semipolar surface orientations. The effects of thermal annealing and chemical treatment on the incorporation and stability of H are also discussed. The near-surface and bulk hydrogen concentrations in the as-grown films increase when changing the surface orientation from (0001) to (000 (1) over bar) to (1 (1) over bar 01) and to (11 (2) over bar0), which may be associated with a decrease in the grain size and change of the growth mode from 2D to 3D. Thermal annealing at 350 degrees C in N(2) leads to a reduction of H concentrations and the intrinsic levels of bulk H are found to correlate with the structural quality and defects in the annealed films.

Lorenz, KCFNUL (author)
Xie, MengyaoLinköpings universitet,Halvledarmaterial,Tekniska högskolan(Swepub:liu)menxi76 (author)
Alves, ECFNUL (author)
Hsiao, C LNational Taiwan University (author)
Chen, L CNational Taiwan University (author)
Tu, L WNational Sun Yat Sen University (author)
Schaff, W JCornell University (author)
Yamaguchi, TRitsumeikan University (author)
Nanishi, YRitsumeikan University (author)
Linköpings universitetHalvledarmaterial (creator_code:org_t)

In:Journal of Applied Physics: American Institute of Physics (AIP)110:6, s. 063535-0021-89791089-7550

By the author/editor: Darakchieva, Van ...; Lorenz, K; Xie, Mengyao; Alves, E; Hsiao, C L; Chen, L C; show more...; Tu, L W; Schaff, W J; Yamaguchi, T; Nanishi, Y; show less...

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