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Fluorescent SiC and...
Fluorescent SiC and its application to white light-emitting diodes
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- Kamiyama, Satoshi (author)
- Department of Materials Science and Engineering, Meijo University, 1-501 Shiogamaguchi, Tenpaku-ku,
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- Iwaya, Motoaki (author)
- Department of Materials Science and Engineering, Meijo University, 1-501 Shiogamaguchi, Tenpaku-ku,
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- Takeuchi, Tetsuya (author)
- Department of Materials Science and Engineering, Meijo University, 1-501 Shiogamaguchi, Tenpaku-ku,
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- Akasaki, Isamu (author)
- Department of Materials Science and Engineering, Meijo University, 1-501 Shiogamaguchi, Tenpaku-ku,
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- Syväjärvi, Mikael (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Yakimova, Rositsa (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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(creator_code:org_t)
- 2011-01-20
- 2011
- English.
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In: Journal of semiconductors. - : IOP Publishing. - 1674-4926. ; 32:1, s. 013004-1-013004-3
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
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- Fluorescent-SiC (f-SiC), which contains donor and acceptor impurities with optimum concentrations, has high conversion efficiency from NUV to visible light caused by donor-acceptor-pair (DAP) recombination. This material can be used as a substrate for a near UV light-emitting diode (LED) stack, and leads to monolithic white LED device with suitable spectral property for general lighting applications. In this paper, we describe basic technologies of the white LED, such as optical properties of f-SiC substrate, and epitaxial growth of NUV stack on the f-SiC substrate.
Keyword
- white LED; phosphor; SiC; donor-acceptor-pair; GaN; general lighting
Publication and Content Type
- ref (subject category)
- art (subject category)
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