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Nucleation Control ...
Nucleation Control of Cubic Silicon Carbide on 6H- Substrates
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- Vasiliauskas, Remigijus (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Marinova, Maya (author)
- Aristotle University of Thessaloniki
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- Hens, Philip (author)
- University Erlangen-Nuremberg
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- Wellmann, Peter (author)
- University Erlangen-Nuremberg
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- Syväjärvi, Mikael (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Yakimova, Rositsa (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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(creator_code:org_t)
- 2011-12-13
- 2012
- English.
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In: Crystal Growth & Design. - : American Chemical Society (ACS). - 1528-7483 .- 1528-7505. ; 12:1, s. 197-204
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
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- The nucleation of cubic (3C) SiC on on-axis 6H-SiC was investigated in the temperature range 1500–1775 °C by the technique of sublimation epitaxy. We have studied two different cases: (i) the initial homoepitaxial growth of 6H-SiC followed by nucleation of 3C-SiC and (ii) nucleation of homoepitaxial 6H-SiC islands. The supersaturation in the growth cell was calculated using the modeled source to substrate temperature difference. We show that, at low temperature and supersaturation, growth of 6H-SiC commences in spiral growth mode, which prepares the surface for 3C-SiC nucleation. Provided the supersaturation is high enough, the 3C-SiC nucleates as two-dimensional islands on terraces of the homoepitaxial 6H-SiC. Detailed structural study indicates that the 3C-SiC began to grow on defect free surfaces. From the experimental and modeling results, we show that the growth parameter window for 3C-SiC is rather narrow. Deviation from it can result in 6H-SiC growth in spiral or 2D-nucleation mode, which suggests the importance of knowledge of supersaturation.
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- ref (subject category)
- art (subject category)
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