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Chloride based CVD ...
Chloride based CVD of 3C-SiC on (0001) α-SiC substrates
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- Henry, Anne (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Leone, Stefano (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Beyer, Franziska C. (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Andersson, Sven (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Kordina, Olle (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Janzén, Erik (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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(creator_code:org_t)
- Trans Tech Publications Inc. 2011
- 2011
- English.
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In: <em>Materials Science Forum Vols. 679-680 (2011) pp 75-78</em>. - : Trans Tech Publications Inc.. ; , s. 75-78
- Related links:
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https://liu.diva-por... (primary) (Raw object)
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https://urn.kb.se/re...
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https://doi.org/10.4...
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Abstract
Subject headings
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- A chloride-based chemical-vapor-deposition (CVD) process has been successfully used to grow very high quality 3C-SiC epitaxial layers on on-axis α-SiC substrates. An accurate process parameters study was performed testing the effect of temperature, surface preparation, precursor ratios, nitrogen addition, and substrate polytype and polarity. The 3C layers deposited showed to be largely single-domain material of very high purity and of excellent electrical characteristics. A growth rate of up to 10 μm/h and a low background doping enable deposition of epitaxial layers suitable for MOSFET devices.
Keyword
- epitaxial growth
- chloride-based CVD
- on-axis
- 3C-SiC
Publication and Content Type
- ref (subject category)
- kon (subject category)
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