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Effects of hydrogen...
Effects of hydrogenation on non-radiative defects in GaNP and GaNAs alloys: An optically detected magnetic resonance study
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- Dagnelund, Daniel (author)
- Linköpings universitet,Funktionella elektroniska material,Tekniska högskolan
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- Vorona, I.P. (author)
- Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kiev, Ukraine
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- Nosenko, G. (author)
- Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kiev, Ukraine
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- Wang, X. J. (author)
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China
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- Tu, C. W. (author)
- Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California, USA
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- Yonezu, H. (author)
- Department of Electrical and Electronic Engineering, Toyohashi University of Technology, Japan
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- Polimeni, A. (author)
- INFM and Dipartimento di Fisica, Università di Roma “La Sapienza”, Roma, Italy
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- Capizzi, M. (author)
- INFM and Dipartimento di Fisica, Universita` di Roma “La Sapienza”, Piazzale A. Moro 2,
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- Chen, Weimin (author)
- Linköpings universitet,Funktionella elektroniska material,Tekniska högskolan
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- Buyanova, Irina (author)
- Linköpings universitet,Funktionella elektroniska material,Tekniska högskolan
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(creator_code:org_t)
- American Institute of Physics (AIP), 2012
- 2012
- English.
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In: Journal of Applied Physics. - : American Institute of Physics (AIP). - 0021-8979 .- 1089-7550. ; 111:023501
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Abstract
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- Photoluminescence and optically detected magnetic resonance techniques are utilized to study defect properties of GaNP and GaNAs alloys subjected to post-growth hydrogenation by low-energy sub-threshold ion beam irradiation. It is found that in GaNP H incorporation leads to activation of new defects, which has a Ga interstitial (Ga-i) atom at its core and may also involve a H atom as a partner. The observed activation critically depends on the presence of N in the alloy, as it does not occur in GaP with a low level of N doping. In sharp contrast, in GaNAs hydrogen is found to efficiently passivate Ga-i-related defects present in the as-grown material. A possible mechanism responsible for the observed difference in the H behavior in GaNP and GaNAs is discussed.
Subject headings
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Publication and Content Type
- ref (subject category)
- art (subject category)
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- By the author/editor
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Dagnelund, Danie ...
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Vorona, I.P.
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Nosenko, G.
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Wang, X. J.
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Tu, C. W.
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Yonezu, H.
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show more...
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Polimeni, A.
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Capizzi, M.
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Chen, Weimin
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Buyanova, Irina
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show less...
- About the subject
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- NATURAL SCIENCES
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NATURAL SCIENCES
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and Physical Science ...
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and Condensed Matter ...
- Articles in the publication
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Journal of Appli ...
- By the university
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Linköping University