Search: onr:"swepub:oai:DiVA.org:liu-74675" >
Effects of hydrogen...
-
Dagnelund, DanielLinköpings universitet,Funktionella elektroniska material,Tekniska högskolan
(author)
Effects of hydrogenation on non-radiative defects in GaNP and GaNAs alloys: An optically detected magnetic resonance study
- Article/chapterEnglish2012
Publisher, publication year, extent ...
-
American Institute of Physics (AIP),2012
-
electronicrdacarrier
Numbers
-
LIBRIS-ID:oai:DiVA.org:liu-74675
-
https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-74675URI
-
https://doi.org/10.1063/1.3676576DOI
Supplementary language notes
-
Language:English
-
Summary in:English
Part of subdatabase
Classification
-
Subject category:ref swepub-contenttype
-
Subject category:art swepub-publicationtype
Notes
-
funding agencies|Swedish Research Council| 621-2010-3815 |Swedish Institute||
-
Photoluminescence and optically detected magnetic resonance techniques are utilized to study defect properties of GaNP and GaNAs alloys subjected to post-growth hydrogenation by low-energy sub-threshold ion beam irradiation. It is found that in GaNP H incorporation leads to activation of new defects, which has a Ga interstitial (Ga-i) atom at its core and may also involve a H atom as a partner. The observed activation critically depends on the presence of N in the alloy, as it does not occur in GaP with a low level of N doping. In sharp contrast, in GaNAs hydrogen is found to efficiently passivate Ga-i-related defects present in the as-grown material. A possible mechanism responsible for the observed difference in the H behavior in GaNP and GaNAs is discussed.
Subject headings and genre
Added entries (persons, corporate bodies, meetings, titles ...)
-
Vorona, I.P.Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kiev, Ukraine
(author)
-
Nosenko, G.Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kiev, Ukraine
(author)
-
Wang, X. J.National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China
(author)
-
Tu, C. W.Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California, USA
(author)
-
Yonezu, H.Department of Electrical and Electronic Engineering, Toyohashi University of Technology, Japan
(author)
-
Polimeni, A.INFM and Dipartimento di Fisica, Università di Roma “La Sapienza”, Roma, Italy
(author)
-
Capizzi, M.INFM and Dipartimento di Fisica, Universita` di Roma “La Sapienza”, Piazzale A. Moro 2,
(author)
-
Chen, WeiminLinköpings universitet,Funktionella elektroniska material,Tekniska högskolan(Swepub:liu)weich55
(author)
-
Buyanova, IrinaLinköpings universitet,Funktionella elektroniska material,Tekniska högskolan(Swepub:liu)iribo40
(author)
-
Linköpings universitetFunktionella elektroniska material
(creator_code:org_t)
Related titles
-
In:Journal of Applied Physics: American Institute of Physics (AIP)111:0235010021-89791089-7550
Internet link
Find in a library
To the university's database
- By the author/editor
-
Dagnelund, Danie ...
-
Vorona, I.P.
-
Nosenko, G.
-
Wang, X. J.
-
Tu, C. W.
-
Yonezu, H.
-
show more...
-
Polimeni, A.
-
Capizzi, M.
-
Chen, Weimin
-
Buyanova, Irina
-
show less...
- About the subject
-
- NATURAL SCIENCES
-
NATURAL SCIENCES
-
and Physical Science ...
-
and Condensed Matter ...
- Articles in the publication
-
Journal of Appli ...
- By the university
-
Linköping University