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| Fältnamn | Indikatorer | Metadata |
|---|---|---|
| 000 | 03616naa a2200421 4500 | |
| 001 | oai:DiVA.org:liu-74675 | |
| 003 | SwePub | |
| 008 | 120203s2012 | |||||||||||000 ||eng| | |
| 024 | 7 | a https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-746752 URI |
| 024 | 7 | a https://doi.org/10.1063/1.36765762 DOI |
| 040 | a (SwePub)liu | |
| 041 | a engb eng | |
| 042 | 9 SwePub | |
| 072 | 7 | a ref2 swepub-contenttype |
| 072 | 7 | a art2 swepub-publicationtype |
| 100 | 1 | a Dagnelund, Danielu Linköpings universitet,Funktionella elektroniska material,Tekniska högskolan4 aut0 (Swepub:liu)danda64 |
| 245 | 1 0 | a Effects of hydrogenation on non-radiative defects in GaNP and GaNAs alloys: An optically detected magnetic resonance study |
| 264 | 1 | b American Institute of Physics (AIP),c 2012 |
| 338 | a electronic2 rdacarrier | |
| 500 | a funding agencies|Swedish Research Council| 621-2010-3815 |Swedish Institute|| | |
| 520 | a Photoluminescence and optically detected magnetic resonance techniques are utilized to study defect properties of GaNP and GaNAs alloys subjected to post-growth hydrogenation by low-energy sub-threshold ion beam irradiation. It is found that in GaNP H incorporation leads to activation of new defects, which has a Ga interstitial (Ga-i) atom at its core and may also involve a H atom as a partner. The observed activation critically depends on the presence of N in the alloy, as it does not occur in GaP with a low level of N doping. In sharp contrast, in GaNAs hydrogen is found to efficiently passivate Ga-i-related defects present in the as-grown material. A possible mechanism responsible for the observed difference in the H behavior in GaNP and GaNAs is discussed. | |
| 650 | 7 | a NATURVETENSKAPx Fysikx Den kondenserade materiens fysik0 (SwePub)103042 hsv//swe |
| 650 | 7 | a NATURAL SCIENCESx Physical Sciencesx Condensed Matter Physics0 (SwePub)103042 hsv//eng |
| 700 | 1 | a Vorona, I.P.u Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kiev, Ukraine4 aut |
| 700 | 1 | a Nosenko, G.u Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kiev, Ukraine4 aut |
| 700 | 1 | a Wang, X. J.u National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China4 aut |
| 700 | 1 | a Tu, C. W.u Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California, USA4 aut |
| 700 | 1 | a Yonezu, H.u Department of Electrical and Electronic Engineering, Toyohashi University of Technology, Japan4 aut |
| 700 | 1 | a Polimeni, A.u INFM and Dipartimento di Fisica, Università di Roma “La Sapienza”, Roma, Italy4 aut |
| 700 | 1 | a Capizzi, M.u INFM and Dipartimento di Fisica, Universita` di Roma “La Sapienza”, Piazzale A. Moro 2,4 aut |
| 700 | 1 | a Chen, Weiminu Linköpings universitet,Funktionella elektroniska material,Tekniska högskolan4 aut0 (Swepub:liu)weich55 |
| 700 | 1 | a Buyanova, Irinau Linköpings universitet,Funktionella elektroniska material,Tekniska högskolan4 aut0 (Swepub:liu)iribo40 |
| 710 | 2 | a Linköpings universitetb Funktionella elektroniska material4 org |
| 773 | 0 | t Journal of Applied Physicsd : American Institute of Physics (AIP)g 111:023501q 111:023501x 0021-8979x 1089-7550 |
| 856 | 4 | u https://liu.diva-portal.org/smash/get/diva2:490064/FULLTEXT01.pdfx primaryx Raw objecty fulltext:print |
| 856 | 4 | u http://liu.diva-portal.org/smash/get/diva2:490064/FULLTEXT01 |
| 856 | 4 8 | u https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-74675 |
| 856 | 4 8 | u https://doi.org/10.1063/1.3676576 |
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