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Anomalously high thermoelectric power factor in epitaxial ScN thin films

Kerdsongpanya, Sit (author)
Linköpings universitet,Tunnfilmsfysik,Tekniska högskolan
Van Nong, Ngo (author)
Technical University of Denmark
Pryds, Nini (author)
Technical University of Denmark
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Zukauskaite, Agne (author)
Linköpings universitet,Institutionen för fysik, kemi och biologi,Tekniska högskolan
Jensen, Jens (author)
Linköpings universitet,Tunnfilmsfysik,Tekniska högskolan
Birch, Jens (author)
Linköpings universitet,Tunnfilmsfysik,Tekniska högskolan
Lu, Jun (author)
Linköpings universitet,Tunnfilmsfysik,Tekniska högskolan
Hultman, Lars (author)
Linköpings universitet,Tunnfilmsfysik,Tekniska högskolan
Wingqvist, Gunilla (author)
Linköpings universitet,Institutionen för fysik, kemi och biologi,Tekniska högskolan
Eklund, Per (author)
Linköpings universitet,Tunnfilmsfysik,Tekniska högskolan
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 (creator_code:org_t)
American Institute of Physics (AIP), 2011
2011
English.
In: Applied Physics Letters. - : American Institute of Physics (AIP). - 0003-6951 .- 1077-3118. ; 99:23, s. 232113-
  • Journal article (peer-reviewed)
Abstract Subject headings
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  • Thermoelectric properties of ScN thin films grown by reactive magnetron sputtering on Al2O3(0001) wafers are reported. X-ray diffraction and elastic recoil detection analyses show that the composition of the films is close to stoichiometry with trace amounts (similar to 1 at. % in total) of C, O, and F. We found that the ScN thin-film exhibits a rather low electrical resistivity of similar to 2.94 mu Omega m, while its Seebeck coefficient is approximately similar to-86 mu V/K at 800 K, yielding a power factor of similar to 2.5 x 10(-3) W/mK(2). This value is anomalously high for common transition-metal nitrides.

Keyword

TECHNOLOGY
TEKNIKVETENSKAP

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