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Low Temperature Photoluminescence Signature of Stacking Faults in 6H-SiC Epilayers Grown on Low Angle Off-axis Substrates

Sun, Jianwu (author)
Linköpings universitet,Halvledarmaterial,Tekniska högskolan
Robert, T. (author)
Université Montpellier 2, France
Jokubavicius, Valdas (author)
Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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Juillaguet, S. (author)
Université Montpellier 2, France
Yakimova, Rositza (author)
Linköpings universitet,Halvledarmaterial,Tekniska högskolan
Syväjärvi, Mikael (author)
Linköpings universitet,Halvledarmaterial,Tekniska högskolan
Camassel, J. (author)
CNRS, Laboratoire Charles Coulomb, Montpellier, France
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 (creator_code:org_t)
Trans Tech Publications Inc. 2012
2012
English.
  • Conference paper (peer-reviewed)
Abstract Subject headings
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  • The radiative recombination spectra of 6H-SiC epilayers grown on low angle (1.4° off-axis) substrates have been investigated by low temperature photoluminescence spectroscopy. Four different types of stacking faults have been identified, together with the presence of 3C-SiC inclusions. From the energy of the momentum-conserving phonons, four excitonic band gap energies have been found with Egx equal to 2.837, 2.698, 2.600 and 2.525 eV. These photoluminescence features, which give a rapid and non-destructive approach to identify stacking faults in 6H-SiC, provide a direct feedback to improve the material growth.

Keyword

Temperature Photoluminescence
Stacking Fault

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