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Small epitaxial gra...
Small epitaxial graphene devices for magnetosensing applications
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- Panchal, V (author)
- NPL,National Physical Laboratory (NPL)
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- Cedergren, Karin, 1975 (author)
- Chalmers,Chalmers tekniska högskola,Chalmers University of Technology
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- Yakimova, Rositsa (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan,Linköping University
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- Tzalenchuk, A (author)
- NPL,National Physical Laboratory (NPL)
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- Kubatkin, Sergey, 1959 (author)
- Chalmers,Chalmers tekniska högskola,Chalmers University of Technology
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- Kazakova, O (author)
- NPL,National Physical Laboratory (NPL)
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(creator_code:org_t)
- American Institute of Physics (AIP), 2012
- 2012
- English.
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In: Journal of Applied Physics. - : American Institute of Physics (AIP). - 0021-8979 .- 1089-7550. ; 111:7, s. 07E509-
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Abstract
Subject headings
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- Hall sensors with the width range from 0.5 to 20.0 mu m have been fabricated out of a monolayer graphene epitaxially grown on SiC. The sensors have been studied at room temperature using transport and noise spectrum measurements. The minimum detectable field of a typical 10-mu m graphene sensor is approximate to 2.5 mu T/root Hz, making them comparable with state of the art semiconductor devices of the same size and carrier concentration and superior to devices made of CVD graphene. Relatively high resistance significantly restricts performance of the smallest 500-nm devices. Carrier mobility is strongly size dependent, signifying importance of both intrinsic and extrinsic factors in the optimization of the device performance.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Nanoteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Nano-technology (hsv//eng)
Keyword
- TECHNOLOGY
- TEKNIKVETENSKAP
- sensors
Publication and Content Type
- ref (subject category)
- art (subject category)
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