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Atomic and Electronic Structure of the (2x1) and c(2x2) 4H-SiC(1(1)over-bar02) Surfaces

Virojanadara, Chariya (author)
Max- Planck-Institut für Festkörperforschung, Stuttgart, Germany
Hetzel, M. (author)
Max- Planck-Institut für Festkörperforschung, Stuttgart, Germany
Johansson, Leif I. (author)
Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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Choyke, Wolfgang J. (author)
Department of Physics and Astronomy, University of Pittsburgh, USA
Starke, Ulrich (author)
Max- Planck-Institut für Festkörperforschung, Stuttgart, Germany
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 (creator_code:org_t)
Trans Tech Publications Inc. 2008
2008
English.
In: SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2. - : Trans Tech Publications Inc.. ; , s. 291-296
  • Conference paper (peer-reviewed)
Abstract Subject headings
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  • The atomic and electronic structure of 4H-SiC(1 1 02) surfaces were investigated usingscanning tunneling microscopy (STM), low-energy electron diffraction (LEED) and photoemission(PES). Two well ordered phases existing on this surface, i.e. (2×1) and c(2×2) are discussed. The(2×1) phase consists of a Si adlayer which is topped by an array of ordered Si-nanowires withelectronic states confined to one dimension. For the c(2×2) phase STM indicates the presence ofadatoms and PES a surface composition close to bulk SiC stoichiometry. A detailed atomic modelfor this c(2×2) phase is proposed.

Keyword

atomic structure
electronic structure
4H-SiC(1 1 02)
photoemission
STM
LEED
one dimension

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