Search: onr:"swepub:oai:DiVA.org:liu-78518" >
Atomic and Electron...
Atomic and Electronic Structure of the (2x1) and c(2x2) 4H-SiC(1(1)over-bar02) Surfaces
-
- Virojanadara, Chariya (author)
- Max- Planck-Institut für Festkörperforschung, Stuttgart, Germany
-
- Hetzel, M. (author)
- Max- Planck-Institut für Festkörperforschung, Stuttgart, Germany
-
- Johansson, Leif I. (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
-
show more...
-
- Choyke, Wolfgang J. (author)
- Department of Physics and Astronomy, University of Pittsburgh, USA
-
- Starke, Ulrich (author)
- Max- Planck-Institut für Festkörperforschung, Stuttgart, Germany
-
show less...
-
(creator_code:org_t)
- Trans Tech Publications Inc. 2008
- 2008
- English.
-
In: SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2. - : Trans Tech Publications Inc.. ; , s. 291-296
- Related links:
-
https://urn.kb.se/re...
-
show more...
-
https://doi.org/10.4...
-
show less...
Abstract
Subject headings
Close
- The atomic and electronic structure of 4H-SiC(1 1 02) surfaces were investigated usingscanning tunneling microscopy (STM), low-energy electron diffraction (LEED) and photoemission(PES). Two well ordered phases existing on this surface, i.e. (2×1) and c(2×2) are discussed. The(2×1) phase consists of a Si adlayer which is topped by an array of ordered Si-nanowires withelectronic states confined to one dimension. For the c(2×2) phase STM indicates the presence ofadatoms and PES a surface composition close to bulk SiC stoichiometry. A detailed atomic modelfor this c(2×2) phase is proposed.
Keyword
- atomic structure
- electronic structure
- 4H-SiC(1 1 02)
- photoemission
- STM
- LEED
- one dimension
Publication and Content Type
- ref (subject category)
- kon (subject category)
To the university's database