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Surface studies of ...
Surface studies of hydrogen etched 3C-SiC(001) on Si(001)
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- Coletti, C. (author)
- University of South Florida, Tampa, USA
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- Frewin, C. L. (author)
- University of South Florida, Tampa, USA
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- Saddow, S. E. (author)
- University of South Florida, Tampa, USA
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- Hetzel, M. (author)
- Max-Planck-Institut für Festkörperforschung, Stuttgart, Germany
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- Virojanadara, Chariya (author)
- Max-Planck-Institut für Festkörperforschung, Stuttgart, Germany
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- Starke, Ulrich (author)
- Max-Planck-Institut für Festkörperforschung, Stuttgart, Germany
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(creator_code:org_t)
- American Institute of Physics (AIP), 2007
- 2007
- English.
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In: Applied Physics Letters. - : American Institute of Physics (AIP). - 0003-6951 .- 1077-3118. ; 91:6, s. 061914-
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
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- Themorphology and structure of 3C-SiC(001) surfaces, grown on Si(001) andprepared via hydrogen etching, are studied using atomic force microscopy(AFM), low-energy electron diffraction (LEED), and Auger electron spectroscopy (AES).On the etched samples, flat surfaces with large terraces andatomic steps are revealed by AFM. In ultrahigh vacuum asharp LEED pattern with an approximate (5×1) periodicity is observed. AES studies reveal a “bulklike” composition up to the nearsurface region and indicate that an overlayer consisting of aweakly bound silicon oxide monolayer is present.
Publication and Content Type
- ref (subject category)
- art (subject category)
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