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White light-emitting diode based on fluorescent SiC
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- Kamiyama, Satoshi (author)
- Meijo University, Japan
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- Iwaya, Motoaki (author)
- Meijo University, Japan
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- Takeuchi, Tetsuya (author)
- Meijo University, Japan
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- Elsevier, 2012
- 2012
- English.
- In: Thin Solid Films. - : Elsevier. - 0040-6090 .- 1879-2731. ; 522, s. 23-25
- Journal article (peer-reviewed)
Abstract
Subject headings
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- A monolithic white light-emitting diode (LED,) comprising a combination of a fluorescent-SiC (f-SiC) substrate and a nitride-based near-UV LED stack, is proposed. On the basis of the recombination of donor and acceptor pairs, the f-SiC substrate works as a phosphor for visible light emission. By employing the Fast Sublimation Growth Process method, the high-quality f-SiC substrate doped with N and B exhibited a nonradiative carrier lifetime of 55 mu s and an internal quantum efficiency (IQE) of 40%. With increasing donor and acceptor doping concentrations, a high IQE was estimated even at a high excitation level.
Keyword
- LED
- SiC
- Internal quantum efficiency
- Nitride semiconductor
- TECHNOLOGY
- TEKNIKVETENSKAP
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- ref (subject category)
- art (subject category)
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