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- Kamiyama, SatoshiMeijo University, Japan (author)
White light-emitting diode based on fluorescent SiC
- Article/chapterEnglish2012
Publisher, publication year, extent ...
- Elsevier,2012
- printrdacarrier
Numbers
- LIBRIS-ID:oai:DiVA.org:liu-86121
- https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-86121URI
- https://doi.org/10.1016/j.tsf.2012.02.017DOI
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- Language:English
- Summary in:English
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- SwePubSwePub
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Notes
- A monolithic white light-emitting diode (LED,) comprising a combination of a fluorescent-SiC (f-SiC) substrate and a nitride-based near-UV LED stack, is proposed. On the basis of the recombination of donor and acceptor pairs, the f-SiC substrate works as a phosphor for visible light emission. By employing the Fast Sublimation Growth Process method, the high-quality f-SiC substrate doped with N and B exhibited a nonradiative carrier lifetime of 55 mu s and an internal quantum efficiency (IQE) of 40%. With increasing donor and acceptor doping concentrations, a high IQE was estimated even at a high excitation level.
Subject headings and genre
- LED
- SiC
- Internal quantum efficiency
- Nitride semiconductor
- TECHNOLOGY
- TEKNIKVETENSKAP
Added entries (persons, corporate bodies, meetings, titles ...)
- Iwaya, MotoakiMeijo University, Japan (author)
- Takeuchi, TetsuyaMeijo University, Japan (author)
- Akasaki, IsamuMeijo University, Japan (author)
- Yakimova, RositsaLinköpings universitet,Halvledarmaterial,Tekniska högskolan(Swepub:liu)rosia15 (author)
- Syväjärvi, MikaelLinköpings universitet,Halvledarmaterial,Tekniska högskolan(Swepub:liu)miksy08 (author)
- Meijo University, JapanHalvledarmaterial (creator_code:org_t)
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- In:Thin Solid Films: Elsevier522, s. 23-250040-60901879-2731
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